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Innovative Air Cavity Packaging Brings Significant Cost Reductions And Performance Improvements To RF Transistors Used In Wireless Infrastructure

2016-05-17 07:09:04| wirelessdesignonline News Articles

Ampleon recently announced the availability of a new package platform that will be rolled out across the entire LDMOS and GaN product portfolio.

Tags: used air cost performance

 

DC 4 GHz GaN RF Transistors: QDP1010 Datasheet

2016-04-28 10:03:06| wirelessdesignonline Downloads

The QDP1010 is a discrete GaN on SiC HEMTs operating from the DC to 4 GHz frequency range. It is a 10W, 50V device with an output power level of 11W at 2 GHz, and a linear gain of 24.7 dB at 2 GHz. This transistor is ideal for wideband or narrowband amplifiers, jammers, and military radar, civilian radar, land mobile, military radio, and test instrumentation applications.

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DC 4 GHz GaN RF Transistors: QDP1010 Datasheet

2016-04-28 10:03:06| rfglobalnet Downloads

The QDP1010 is a discrete GaN on SiC HEMTs operating from the DC to 4 GHz frequency range. It is a 10W, 50V device with an output power level of 11W at 2 GHz, and a linear gain of 24.7 dB at 2 GHz. This transistor is ideal for wideband or narrowband amplifiers, jammers, and military radar, civilian radar, land mobile, military radio, and test instrumentation applications.

Tags: ghz gan datasheet transistors

 

DC 4 GHz GaN RF Transistors: QPD1009 Datasheet

2016-04-28 10:01:05| wirelessdesignonline Downloads

The QDP1009 is a discrete GaN on SiC HEMTs operating from the DC to 4 GHz frequency range. It is a 15W, 50V device with an output power level of 17W at 2 GHz, and a linear gain of 24 dB at 2 GHz. This transistor is ideal for wideband or narrowband amplifiers, jammers, and military radar, civilian radar, land mobile, military radio, and test instrumentation applications.

Tags: ghz gan datasheet transistors

 

DC 4 GHz GaN RF Transistors: QPD1009 Datasheet

2016-04-28 10:01:05| rfglobalnet Downloads

The QDP1009 is a discrete GaN on SiC HEMTs operating from the DC to 4 GHz frequency range. It is a 15W, 50V device with an output power level of 17W at 2 GHz, and a linear gain of 24 dB at 2 GHz. This transistor is ideal for wideband or narrowband amplifiers, jammers, and military radar, civilian radar, land mobile, military radio, and test instrumentation applications.

Tags: ghz gan datasheet transistors

 

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