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Tag: mosfets
Dual N-Channel Power MOSFETs suit automotive applications.
2013-12-13 14:28:09| Industrial Newsroom - All News for Today
Supplied in 5 x 6 mm asymmetric PowerPAK® SO-8L package, 40 V Siliconix SQJ940EP and SQJ942EP combine both high- and low-side MOSFETs required for synchronous DC/DC buck converters. At 10 V, Model SQJ940EP offers max on-resistance of 6.4 mΩ for Channel 2 low-side MOSFET and 16 mΩ for Channel 1 high-side MOSFET, while Model SQJ942EP offers max on-resistance of 11 mΩ for low-side MOSFET and 22 mΩ for high-side MOSFET. Both TrenchFET® devices are AEC-Q101-qualified and operate up to +175°C. This story is related to the following:MOSFETs |
Tags: power
applications
automotive
dual
Power MOSFETs suit DC-DC converter applications.
2013-12-12 14:31:30| Industrial Newsroom - All News for Today
Available in 3 models, AP4034 Series N-Channel MOSFETs feature low typical gate charge of 15 nC. Model AP4034GMT-HF-3, housed in PMPAK5x6 package, offers max on-resistance of 8 mΩ and drain-source current rating of 44.3 A. Supplied in standard SO-8 package, Model AP4034GM-HF-3 offers max on-resistance of 9 mΩ and drain-source current of 13 A. Model AP4034GYT-HF-3 has same low max on-resistance of 9 mΩ, but with drain-source current of 15.5 A in 3 x 3 mm footprint. This story is related to the following:MOSFETs |
Tags: power
applications
suit
converter
P-Channel MOSFETs offer industry-low RDS(on).
2013-11-21 17:08:28| Industrial Newsroom - All News for Today
In applications where saving PCB space is critical, -12 V Model Si5411EDU offers low on-resistance of 8.2 mΩ (-4.5 V) and 11.7 mΩ (-2.5 V) in 3.0 x 1.9 mm PowerPAK ChipFET package. When higher voltage rating is needed, -20 V Model Si5415AEDU features values of 9.6 mΩ (-4.5 V) and 13.2 mΩ (-2.5 V). Both provide 5,000 V ESD protection. Model SiSS23DN, housed in 3.3 x 3.3 mm PowerPAK 1212-8S package, provides 4.5 mΩ (-4.5 V) and 6.3 mΩ (-2.5 V) for applications requiring low on-resistance. This story is related to the following:MOSFETs |
Tags: offer
mosfets
rdson
pchannel
N- and P-Channel MOSFETs feature on-resistance below 100 mohm.
2013-11-13 14:32:34| Industrial Newsroom - All News for Today
Suited for space-constrained handheld applications, N- and P-channel FemtoFET™ MOSFETs come in 0.6 x 1.0 x 0.35 mm LGA package and offer ESD protection >4,000 V human body model. Continuous drain current values are available from 1.5–3.1 A (N-channel) and -2.5 to -1.6 (P-channel). Typ rdson ranges are 130-370 mΩ (1.8 V), 110-240 mΩ (2.5 V), and 90-200 mΩ (4.5 V) for N-channel MOSFETs and 395-580 mΩ (1.8 V), 145-338 mΩ (2.5 V), and 90-210 mΩ (4.5 V) for P-channel MOSFETs. This story is related to the following:MOSFETs
Tags: feature
mosfets
pchannel
onresistance
FemtoFET MOSFETs with lowest on-resistance target mobile applications
2013-11-06 15:10:35| Semiconductors - Topix.net
Texas Instruments claims to offer the industry's smallest, low on-resistance MOSFETS for space-constrained handheld applications, such as smartphones and tablets.
Tags: mobile
applications
target
lowest
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