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Tag: mosfets
Fairchild's High-Current, High Efficiency MOSFETs Now Available In TO-Leadless Packaging For Automotive
2015-03-06 01:25:43| autocentral Home Page
Fairchild , a leading global supplier of high-performance power semiconductor solutions, announced recently the availability of its next generation PowerTrench MOSFETs for automotive applications in the high-power TO-Leadless (TO-LL) package (JEDEC MO-299)
Tags: high
automotive
efficiency
packaging
Availability of Fairchild PowerTrench MOSFETs for automotive in high-power TO-Leadless package; power electronics and motors
2015-03-02 18:55:25| Green Car Congress
Tags: power
electronics
availability
automotive
Depletion-Mode MOSFETs utilize vertical DMOS process.
2015-02-11 14:30:48| Industrial Newsroom - All News for Today
Offered in SOT-89/-223/-23 packages, CPC39xx N-channel depletion-mode MOSFETs are available with voltage ratings that range from 60–800 V. These normally on (NO) FETs, with max Gate-to-Source threshold voltages from -2.9 to -3.9 V, can conduct current without any gate voltage. Applications include voltage pre-regulator circuits, cold start voltage feed, current sources, constant current loads, LED drive circuits, NO switches, ignition modules, converters, and power supplies.
Tags: process
vertical
utilize
mosfets
High-Voltage MOSFETs suit SMPS applications.
2015-01-23 14:32:21| Industrial Newsroom - All News for Today
Built on second-generation Super Junction Technology, 500 V Series of High-Voltage MOSFETs are optimized for operation in switch mode power supplies to 500 W. Devices range from 12–20 A with low on-resistance from 190–380 mΩ and ultra-low gate charge of 22–45 nC. Designed to withstand high energy pulse in avalanche and commutation modes, RoHS-compliant devices meet stringent 80 PLUS efficiency standards required for consumer products, lighting applications, and ATX/silver box PC SMPS.
Tags: applications
suit
mosfets
smps
N-Channel Power MOSFETs achieve low resistance.
2015-01-22 14:31:53| Industrial Newsroom - All News for Today
Part of NexFET™ product line, 25 V Model CSD16570Q5B supports max Rdson of 0.59 mΩ, while 30 V Model CSD17570Q5B achieves max Rdson of 0.60 mΩ. Both are housed in 5 x 6 mm QFN package and are suitable for hot swap and ORing applications. For low-voltage battery-powered applications, 12 V Model CSD13383F4 comes in 0.6 x 1.0 mm FemtoFET™ package with Rdson of 44 mΩ at 4.5 V.
Tags: power
low
achieve
resistance
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