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Tag: mosfets
Compact P-Channel MOSFETs offer low on-resistance.
2013-09-06 14:30:26| Industrial Newsroom - All News for Today
TrenchFET® Gen III p-channel power MOSFETs include -12 SiA467EDJ and -20 V with respective on-resistance down to 13 and 14.5 mΩ (-4.5 V gate drive) as well as -30 V SiA449DJ and SiA483DJ with respective on-resistance to 20 and 21 mΩ (-10 V gate drive). Models SiA437DJ and SiA467EDJ also feature 30 A current rating for load switch applications with large inrush currents. Designed for use in portable electronics, these products come in 2 x 2 mm PowerPAK® SC-70 package. This story is related to the following:MOSFETs
Tags: low
offer
compact
low compact
Microsemi's New Higher Power And Voltage MOSFETs Targeted At RF And Broadband Communications Applications
2013-08-27 07:36:59| rfglobalnet News Articles
Microsemi Corporation(Nasdaq:MSCC), a leading provider of semiconductor solutions differentiated by power, security, reliability and performance, today announced an expansion of its high-frequency vertical diffusion metal oxide semiconductor (VDMOS) MOSFET product family.
Tags: power
applications
higher
communications
MOSFETs target RF and broadband communication applications.
2013-08-23 14:27:47| Industrial Newsroom - All News for Today
Designed to operate in frequency range of 2–60 MHz, Model VRF2944 offers 400 W of output power at 50 V supply voltage, while Model VRT3933 delivers 300 W of output power at up to 100 V supply. Four VRF3933 devices with 2 in parallel, and those 2 parallel pairs in push-pull, are capable of launching 1.1 kW with 83 V supply voltage through 4:1 transformer to 50 Ω load. For reliability, nitride passivated chips have gold metallization and gold wire bonds. This story is related to the following:RF Transistors | MOSFET Transistors | Integrated Circuits (IC)
Tags: applications
communication
target
broadband
Dual Channel MOSFETs simplify synchronous buck designs.
2013-08-15 14:30:45| Industrial Newsroom - All News for Today
Comprising high-side control MOSFET (CH-1) and low-side synchronous MOSFET (CH-2), AP6950GYT comes in 3 mm² square PMPAK®3x3 and is optimized for synchronous buck applications. This asymmetric, dual N-channel enhancement mode power MOSFET offers Drain-Source breakdown voltage (BVDSS) of 30 V for both channels and on-resistance of 18 mΩ for CH-1 and 10.5 mΩ for CH-2. Targeting synchronous buck DC/DC converter power designs, MOSFETs are RoHS compliant and halogen free. This story is related to the following:MOSFETs
Tags: channel
designs
dual
buck
Cree SiC MOSFETs Enable New Generation of High Efficiency and High Reliability Power Supplies ...
2013-07-22 06:00:00| Industrial Newsroom - All News for Today
Expanded Portfolio of Cree® MOSFETs enables 21 Percent Reduction in Power Losses and Provides a Simpler Architecture with Half the Number of Components<br /> <br /> DURHAM, N.C. – Cree, Inc. (Nasdaq: CREE) announces that its newly expanded portfolio of 1200 V SiC MOSFETs are being incorporated into the latest advanced power supplies from Delta Elektronika BV. Delta Elektronika demonstrated a 21 percent decrease in overall power supply losses and a reduction in component count by up to 45 ...This story is related to the following:Electrical Equipment and Systems Sponsored by: Globtek Inc. - MOBILE BANNER ADSearch for suppliers of: Laterally Diffused MOSFETs (LDMOS) | Switching Transistors | Power Transistors |
Tags: high
power
supplies
generation
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