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Tag: mosfets
Gate-Drive Transformers control automotive MOSFETs.
2015-08-05 14:31:06| Industrial Newsroom - All News for Today
Measuring less than 8 mm in height, GDAU Series guarantees insulation level of 3 kV and creepage distance greater than 5 mm. Use of special insulated wire and special construction lower parasitic elements to values optimized for switching frequency of 90–125 kHz. Series shows magnetizing inductance value of no less than 400 µH to prevent output control voltage from any noticeable droop. Operating from -40 to +155°C, SMD devices are fully compliant with automotive AEC-Q200 standard.
Tags: control
automotive
transformers
mosfets
Using Power MOSFETs In Parallel
2015-07-24 17:43:55| rfglobalnet Downloads
This application note presents and discusses some of the problems that may be experienced when multiple MOSFETs are operated in a paralleled group.
Tags: power
parallel
mosfets
power mosfets
AC/DC Converter Control IC drives SiC MOSFETs.
2015-06-30 14:31:05| Industrial Newsroom - All News for Today
Designed specifically for SiC MOSFET drive in industrial equipment such as servers and other large power applications, Model BD7682FJ-LB includes multiple protection functions that enable support for voltages up to 690 Vac. Device integrates gate drive circuit as well as quasi-resonant system that delivers lower noise and higher efficiency versus conventional PWM methods. With support for 120 kHz switching frequencies, IC expands applicability.
Tags: control
drives
converter
sic
N-Channel Power MOSFETs target automotive applications.
2015-06-16 14:31:05| Industrial Newsroom - All News for Today
Featuring chip that uses U-MOSVIII-H process in TO-220SM(W) package, Models TK160F10N1 and TK200F04N1L are 100 V/160 A and 40 V/200A MOSFETs, respectively. Devices achieve low on-resistance characteristics of RDS(ON) = 0.78 m (typical) at V(GS) = 10 V for TK200F04N1L and RDS(ON) = 2.0m (typical) at V(GS) = 10 V for TK160F10N1. With low thermal resistance of R(th(ch-c))=0.4°C/W max, both MOSFETs are suited for electric power steering, DC-DC converters, motor drivers, and load switches.
Tags: power
applications
automotive
target
N-Channel MOSFETs save energy in soft switching topologies.
2015-05-26 14:31:05| Industrial Newsroom - All News for Today
Built on superjunction technology, 600 Volt EF Series is suited for zero voltage switching/soft switching topologies such as phase-shifted bridges and LLC converter half bridges. Fast body diode N-channel power MOSFETs include 21 A Model SiHx21N60EF, 47 A Model SiHx47N60EF, and 70 A Model SiHx70N60EF with ultra-low on-resistance of 176 mΩ, 65 mΩ, and 38 mΩ, respectively. Low reverse recovery charge helps to avoid failure from shoot-through and thermal overstress.
Tags: save
energy
soft
switching
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