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0.1 - 12 GHz High Power GaN SPDT Switch: TGS2352-2 Datasheet
2016-01-08 11:31:38| wirelessdesignonline Downloads
The TGS2352-2 is a SPDT GaN switch operating in the 0.1 – 12 GHz frequency range. This switch provides up to 20W input power handling, and maintains a low insertion loss of 1.0 dB or less, and a typical -35 dB isolation.
GaN On SiC Advantage: Interview With Doug Reep, Sr. Director Of Research
2016-01-08 08:51:58| rfglobalnet Home Page
Video interview with Qorvo’s Director of Research as he discusses the advantages of GaN on SiC.
Tags: research
director
advantage
interview
GaN On SiC Advantage: Interview With Doug Reep, Sr. Director Of Research
2016-01-08 08:51:58| wirelessdesignonline Downloads
Video interview with Qorvo’s Director of Research as he discusses the advantages of GaN on SiC.
Tags: research
director
advantage
interview
Ampleon Introduces GaN RF Power Transistors In 10 To 200W Ratings
2015-12-18 06:09:34| rfglobalnet Home Page
Ampleon recently announced the extension of its portfolio of GaN RF power transistors based on a 0.5um HEMT process technology.
Tags: to
power
ratings
introduces
Building Blocks For GaN Power Switches
2015-12-18 05:30:51| rfglobalnet Home Page
A team of engineers from Cornell University, the University of Notre Dame and the semiconductor company IQE has created gallium nitride (GaN) power diodes capable of serving as the building blocks for future GaN power switches — with applications spanning nearly all electronics products and electricity distribution infrastructures.
Tags: power
building
blocks
switches
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