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Wolfspeed Introduces 50V Plastic GaN HEMTs For LTE & Radar

2015-10-13 06:32:02| rfglobalnet Home Page

Wolfspeed, A Cree Company and a leading global supplier of GaN-on-SiC high electron mobility transistors (HEMTs) and monolithic microwave integrated circuits (MMICs), has introduced two new plastic-packaged 50V/60W GaN HEMT devices that provide the intrinsic GaN value of power and bandwidth in a low cost package platform.

Tags: plastic radar introduces gan

 

Paradise Releases Performance-Enhanced 3 RU SSPAs For GaAs And GaN Variants

2015-10-08 16:52:13| rfglobalnet Home Page

Teledyne Paradise Datacom recently announced the latest innovation to their 3RU rack height solid state power amplifiers. These new amplifiers are available in either GaN or GaAs technologies to cover as many applications as possible.

Tags: releases paradise variants gan

 
 

Advantech Wireless Releases Second Generation GaN Technology Based 50 Watt X-Band SSPB/BUC For Tactical Mobile Military Applications

2015-10-06 07:28:20| rfglobalnet Home Page

Advantech Wireless, a global leader for Satellite broadband communications solutions, announced recently the release of the Second Generation Gallium Nitride (GaN) Technology based 50 Watt X-Band Solid State Power Block/Block UpConverter (SSPB/BUC) for Tactical Mobile Military Applications.

Tags: based technology mobile applications

 

Panasonic Develops GaN Diodes With High Current Operations And A Low Turn-On Voltage

2015-10-05 07:10:19| rfglobalnet Home Page

Panasonic Corporation recently announced that it developed gallium nitride (GaN) diodes that can not only operate at a high current that is four times greater than that tolerated by conventional silicon carbide (SiC) diodes, but also operate at low voltages by virtue of their low turn-on voltage.

Tags: high current low operations

 

Panasonic Develops GaN Diodes With High Current Operations And A Low Turn-On Voltage

2015-10-05 07:10:19| wirelessdesignonline News Articles

Panasonic Corporation recently announced that it developed gallium nitride (GaN) diodes that can not only operate at a high current that is four times greater than that tolerated by conventional silicon carbide (SiC) diodes, but also operate at low voltages by virtue of their low turn-on voltage.

Tags: high current low operations

 

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