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Qorvo's New Plastic GaN RF Transistors Make X-Band Radar More Affordable

2015-10-02 07:22:00| wirelessdesignonline News Articles

Qorvo™, Inc., a leading provider of RF solutions for mobile, infrastructure and aerospace/defense applications, recently announced three new GaN RF transistors in low-cost plastic packages designed to enable smaller size and greater reliability in civilian marine, airborne and infrastructure radar systems.

Tags: make plastic affordable radar

 

Qorvo Introduces High-Performance GaN Power Amplifiers For Satellite Communications

2015-10-02 07:08:45| wirelessdesignonline News Articles

Qorvo, Inc., a leading provider of RF solutions for mobile, infrastructure and aerospace/defense applications, recently announced a family of Gallium Nitride(GaN) power amplifiers that dramatically improve the efficiency, gain and power performance of commercial VSAT and military satellite communications.

Tags: power communications satellite introduces

 
 

Qorvo Introduces High Power Plastic Packaged GaN MMICs

2015-10-02 07:01:58| wirelessdesignonline News Articles

Qorvo, Inc., a leading provider of RF solutions for mobile, infrastructure and aerospace/defense applications, recently announced the introduction of high power gallium nitride (GaN) monolithic microwave integrated circuit (MMIC) power amplifiers in plastic packages designed to improve the size, weight and power performance in commercial and military S-band radar applications.

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Advantech Wireless Releases Second Generation GaN Technology Based 300W/400W X-Band SapphireBlu SSPA/SSPB For Military Applications

2015-09-25 07:49:13| rfglobalnet Home Page

Advantech Wireless, a global leader for Satellite broadband communications solutions, announced recently the release of the Second Generation GaN Technology based 300W/400W X-Band SapphireBlu SSPA/SSPB for military applications.

Tags: based technology applications generation

 

GaN RF Input-Matched Transistors: TGF3021-SM Datasheet

2015-09-24 18:32:51| rfglobalnet Downloads

The TGF3021-SM is a wideband 32 V RF transistor operating in the 0.03 to 4.0 GHz frequency range. These devices have an integrated matching network that allows for wideband gain and power performance, while the output is simultaneously matched to optimize power and efficiency for any region within the band.

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