je.st
news
Tag: gan
GaN Power Amplifiers: TGA2219-CP Datasheet
2015-12-10 11:00:02| rfglobalnet Downloads
The TGA2219-CP is a 3-stage GaN power amplifier that operates from 13.4-16.5 GHz, provides more than 25 W of saturated output power, and has greater than 27 dB of large signal gain. The device is available in a 15.2 x 15.2mm bolt-down package, and is ideally suited for satellite communications, data link, and radar applications.
Tags: power
gan
amplifiers
datasheet
GaN Power Amplifiers: TGA2219-CP Datasheet
2015-12-10 11:00:02| wirelessdesignonline Downloads
The TGA2219-CP is a 3-stage GaN power amplifier that operates from 13.4-16.5 GHz, provides more than 25 W of saturated output power, and has greater than 27 dB of large signal gain. The device is available in a 15.2 x 15.2mm bolt-down package, and is ideally suited for satellite communications, data link, and radar applications.
Tags: power
gan
amplifiers
datasheet
GaN Power Amplifiers: TGA2219 Datasheet
2015-12-10 10:55:17| wirelessdesignonline Downloads
The TGA2219 is a Ku-band MMIC GaN power amplifier that operates from 13.4-16.5 GHz, provides more than 25 W of saturated output power, and has greater than 27 dB of large signal gain. The device is available in a 15.2 x 15.2mm bolt-down package, and is ideally suited for satellite communications, data link, and radar applications.
Tags: power
gan
amplifiers
datasheet
GaN Power Amplifiers: TGA2219 Datasheet
2015-12-10 10:55:17| rfglobalnet Downloads
The TGA2219 is a Ku-band MMIC GaN power amplifier that operates from 13.4-16.5 GHz, provides more than 25 W of saturated output power, and has greater than 27 dB of large signal gain. The device is available in a 15.2 x 15.2mm bolt-down package, and is ideally suited for satellite communications, data link, and radar applications.
Tags: power
gan
amplifiers
datasheet
25W, 32V, DC-12 GHz GaN RF Transistor: TGF2979-SM Datasheet
2015-12-10 09:55:36| rfglobalnet Home Page
The TGF2979-SM is a 5W discrete GaN on SiC HEMT with an operating frequency in the DC-12 GHz range, and an operating voltage of 25V. The transistor is constructed with TriQuint’s proven TQGaN25 process and is useful for a wide variety of applications including military and civilian radar, radio communications, and avionics.
Tags: ghz
gan
transistor
datasheet
Sites : [12] [13] [14] [15] [16] [17] [18] [19] [20] [21] [22] [23] [24] [25] [26] [27] [28] [29] [30] [31] next »