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X-Band GaN High Power Solid State Power Amplifier

2015-09-23 16:45:26| rfglobalnet Products

CPI’s VSX3630 Solid State Power Amplifier utilizes GaN transistors to provide high gain, high efficiency and excellent pulse fidelity. This amplifier is rugged, reliable, highly-efficient, easy to maintain, and is perfect for use in radar applications covering the 7.8 – 9.8 GHz frequency band.

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2-22 GHz Highly Robust GaN LNA: TGA2227-SM Datasheet

2015-09-23 13:00:55| rfglobalnet Downloads

The TGA2227-SM features a high overall electrical performance, and a high level of input power robustness for more design flexibility in the receive chain circuit protection. It covers the 2-22 GHz frequency range, and delivers >15 dB small signal gain and >+22 dBm P1dB while supporting 2 dB mid-band Noise Figure.

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2-22 GHz Highly Robust GaN LNA: TGA2227-SM

2015-09-23 12:56:29| rfglobalnet Home Page

The TGA2227-SM is a highly robust GaN Low-Noise Amplifier (LNA) covering the 2-22 GHz frequency range, and delivers >15 dB small signal gain and >+22 dBm P1dB while supporting 2 dB mid-band Noise Figure. This LNA offers a high overall electrical performance, and a high level of input power robustness for more design flexibility in the receive chain circuit protection.

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Ku-Band GaN PA / Driver Amplifier: TGA2958-SM

2015-09-23 12:40:58| rfglobalnet Home Page

The TGA2958-SM is a GaN PA/diver amplifier with operating parameters in the Ku-band between13 and 18 GHz, providing 2W of saturated output power, and has greater than 21 dB of large signal gain. These amplifiers are designed and manufactured on TriQuint’s GaN on SiC production process that provides superior performance while maintaining high reliability.

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MACOM Announces Milestone In The Commercialization Of GaN On Silicon Technology

2015-09-15 06:10:29| rfglobalnet Home Page

M/A-COM Technology Solutions Inc. (“MACOM”), a leading supplier of high-performance analog, RF, microwave, millimeterwave and photonic semiconductor products, announced that it has shipped more than one million GaN-on-Silicon (GaN on Si) RF power devices to date to customers for use in communications, military and other RF applications.

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