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Qorvo Drives GaN Into Ka-Band To Improve Satellite Internet
2015-09-15 04:10:24| rfglobalnet Home Page
Qorvo, Inc., a leading provider of RF solutions for mobile, infrastructure and aerospace/defense applications, recently announced a new highly cost effective, high performance Ka-band 3 watt GaN power amplifier for commercial VSAT satellite ground terminals transmitting high speed internet data.
Tags: internet
improve
satellite
drives
Wolfspeed, A Cree Company, to Promote Proven, Reliable GaN HEMTs at EuMW 2015
2015-09-14 12:31:15| Industrial Newsroom - All News for Today
Wolfspeed, A Cree Company and a leading global supplier of GaN-on-SiC high electron mobility transistors (HEMTs) and monolithic microwave integrated circuits (MMICs), is exhibiting at European Microwave Week (EuMW) 2015, which will take place September 611, 2015 in Paris. Exhibiting at Booth #240, Chris Harris...
Tags: company
promote
reliable
proven
GaN Power Amplifiers boast high power and high gain.
2015-09-11 14:31:08| Industrial Newsroom - All News for Today
Featuring high gain levels from 43–60 dB across frequency bands of 30 MHz to 7.5 GHz, GaN Coaxial Power Amplifiers provide saturated output power levels from 10–100 W with 20–35% Power Added Efficiency. Thermal efficiency of GaN technology enables assemblies to be integrated into compact coaxial packages. All are equipped with single voltage supplies which are internally regulated. Devices' 50 Ω input/output matched designs are adaptable to range of power and modulation requirements.
Diamond Microwave Launches 1kW Ultra-Compact Pulsed GaN X-Band SSPA
2015-09-11 09:34:43| rfglobalnet News Articles
Diamond Microwave, a specialist in high performance microwave power amplifiers, has announced a ten-fold increase in its power output capability with the addition of a 1kW X-band model to the company’s range of GaN-based pulsed solid-state power amplifiers (SSPA).
Tags: diamond
microwave
launches
gan
Infineon Introduces GaN Devices For Mobile Base Station Transmitters, Charts Path To 5G Cellular Infrastructure
2015-09-11 09:32:10| rfglobalnet News Articles
Infineon Technologies AG introduced its first devices in a family of Gallium Nitride (GaN) on Silicon Carbide (SiC) RF power transistors at this year's European Microwave Week.
Tags: mobile
base
station
path
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