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GaN RF Input-Matched Transistors: TGF3020-SM Datasheet
2015-09-24 18:27:05| rfglobalnet Downloads
The TGF3020-SM is a wideband 32 V RF transistor operating in the 4.0 to 6.0 GHz frequency range. These devices have an integrated matching network that allows for wideband gain and power performance, while the output is simultaneously matched to optimize power and efficiency for any region within the band.
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gan transistors
GaN RF Input-Matched Transistors: TGF3015-SM Datasheet
2015-09-24 18:23:29| rfglobalnet Downloads
The TGF3015-SM is a wideband 32 V RF transistor operating in the 30 MHz to 3.0 GHz frequency range. These devices have an integrated matching network that allows for wideband gain and power performance, while the output is simultaneously matched to optimize power and efficiency for any region within the band.
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datasheet
transistors
gan transistors
GaN RF Input-Matched Transistors: TGF2965-SM Datasheet
2015-09-24 18:18:41| rfglobalnet Downloads
The TGF2965-SM is a wideband 32 V RF transistor operating in the 0.03 to 4.0 GHz frequency range. These devices have an integrated matching network that allows for wideband gain and power performance, while the output is simultaneously matched to optimize power and efficiency for any region within the band.
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datasheet
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gan transistors
GaN RF Input-Matched Transistors
2015-09-24 18:14:41| rfglobalnet Products
Qorvo offers a series of wideband 32 V RF input-matched transistors that are ideal for commercial and defense communications applications. These devices have an integrated matching network that allows for wideband gain and power performance, while the output is simultaneously matched to optimize power and efficiency for any region within the band.
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transistors
X-Band GaN High Power Solid State Power Amplifier Datasheet
2015-09-23 16:49:27| rfglobalnet Downloads
CPI’s VSX3630 Solid State Power Amplifier is rugged, reliable, highly-efficient, easy to maintain, and is perfect for use in radar applications covering the 7.8 – 9.8 GHz frequency band. Features include BIT and controls, 100 W pulsed modules at 20% duty, and 1.5 kW to 12 kW combined power for excellent AM/PM, phase-noise and spectral regrowth performance.
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