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Millimeter Wave Technology And GaN RF Device Market To Grow At High CAGR - New Report By MicroMarket Monitor
2014-05-30 09:52:49| rfglobalnet Home Page
The revenue for the global millimeter wave technology market is estimated to reach $208.12 million by the end of 2014, and is expected to grow to cross $1.9 billion in 2020 at a CAGR of 45.09%. This growth can be attributed to the growing telecom application market for MM wave technology, especially in the small cell backhaul field.
Tags: by
high
report
technology
IEEE Power Electronics Society (PELS) Webinar, 'GaN Transistors Crushing Silicon In Wireless Energy Transfer'
2014-05-23 07:51:04| electronicsweb Home Page
Efficient Power Conversion Corporation (EPC) experts on the design and use of gallium nitride transistors will conduct a one-hour webinar sponsored by the IEEE Power Electronics Society (PELS) on June 4th from 10:30 AM to 11:30 AM (EDT). In this webinar eGaN FETs are compared with MOSFETs in highly resonant wireless energy transfer using class-E, and a novel high efficiency voltage-mode class-D topology
Tags: power
society
electronics
energy
Transphorm Obtains Exclusive Licensing Rights To Furukawa Electric's Gallium Nitride (GaN) Patent Portfolio
2014-05-20 08:05:15| rfglobalnet Home Page
Transphorm Inc. today announced that it has obtained a sole worldwide license to Furukawa Electric Co., Ltd.'s extensive Gallium Nitride (GaN) power device portfolio that includes approximately 40 U.S. issued patents and 110 Japanese issued patents.
Tags: rights
exclusive
portfolio
patent
Cree Introduces Highest Power And Frequency Plastic Packaged GaN Transistors For Low Cost Radar And Datalinks
2014-05-16 13:01:18| rfglobalnet Home Page
Cree, Inc. introduces the industry’s highest power continuous wave (CW) GaN HEMT RF transistors packaged in a dual-flat no-leads (DFN) format. Aimed at the cost-sensitive sub-100W commercial radar and data link amplifier market segments, the new 6- and 25-watt DFN transistors effectively obsolete the use of inefficient GaAs transistors in C- and X-Band frequencies and also enable the practical replacement of short life tube-based technology for commercial radar applications such as weather, marine and surveillance.
Cree Introduces Highest Power And Frequency Plastic Packaged GaN Transistors For Low Cost Radar And Datalinks
2014-05-16 13:01:18| electronicsweb Home Page
Cree, Inc. introduces the industry’s highest power continuous wave (CW) GaN HEMT RF transistors packaged in a dual-flat no-leads (DFN) format
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