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Broadband 20 GHz GaN PA is designed for reliability.
2014-06-12 14:30:57| Industrial Newsroom - All News for Today
Fabricated on GaN, CMD184 offers bandwidth of 0.5–20 GHz, output 1 dB compression point of >+34 dBm, and flat gain of 13 dB. This broadband 20 GHz GaN power amplifier (PA) requires off-chip bias tee for proper operation. Die offers full passivation for maximum reliability and moisture protection. In addition to microwave radio and VSAT, suitable areas of use include telecom infrastructure, test instrumentation, as well as military and space applications. This story is related to the following:Gallium Nitride (GaN) Amplifiers |
Tags: designed
reliability
ghz
broadband
GaN MMIC PAs suit Ka-band satellite communication terminals.
2014-06-10 14:38:44| Industrial Newsroom - All News for Today
Developed with GaN HEMT power process, APN228 and APN229 provide respective saturated output power of 13 and 8 W. These broadband, 2-stage amplifiers operate from 27–31 GHz and, when integrated in solid-state power amplifiers (SSPAs), enable increased data rate in communication systems. Respectively, 16.0 mm² APN228 and 7.41 mm² APN229 provide 19.5 and 20 dB linear gain, 41.2 dBm (13 W) and 39 dBm (8 W) saturated output power, and >27% and >30% Power Added Efficiency (PAE). This story is related to the following:Communication Systems and EquipmentSearch for suppliers of: Integrated Circuits (IC) | Microwave Monolithic Integrated Circuit (MMIC) Amplifiers
Tags: pas
communication
suit
satellite
Northrop Grumman Introduces High Power GaN Amplifiers For Ka-band Satellite Communication Terminals
2014-06-06 08:48:49| rfglobalnet Home Page
A pioneer in the design and fabrication of advanced semiconductors, Northrop Grumman Corporation has introduced two new high power gallium nitride (GaN) monolithic microwave integrated circuit (MMIC) power amplifiers for Ka-band satellite communication terminals and point-to-point digital communication links.
Tags: high
power
communication
satellite
Diamond Microwave Launches Ultra-Compact 2 6GHz GaN SSPA
2014-06-05 11:19:33| rfglobalnet Home Page
Diamond Microwave, a specialist in high performance microwave power amplifiers, is extending its range of GaN-based solid-state power amplifiers (SSPA) to include a 2 - 6GHz model that can be operated in either pulsed or CW mode.
Tags: diamond
microwave
launches
gan
API Technologies Debuts GaN Power Amplifier Drivers At The International Microwave Symposium
2014-06-02 12:43:36| rfglobalnet Home Page
API Technologies Corp. (“API” or the “Company”), a leading provider of high performance RF/microwave, power, and security solutions for critical and high-reliability applications, debuts a new line of Gallium Nitride (GaN) drivers to provide a complete, front-to-back amplifier solution for applications requiring high levels of gain and output power.
Tags: international
power
technologies
drivers
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