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Broadband 100 Watt GaN Power Amplifier: Model QBS-598
2014-06-02 07:46:36| rfglobalnet Downloads
API Technologies’ Model QBS-598 is a high power, class AB amplifier utilizing the latest GaN technology to offer broadband performance from 30 to 512 MHz in support of critical communication requirements for both commercial and military applications.
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broadband
watt
Normally-Off 100V GaN Transistors come in low-inductance package.
2014-05-30 14:31:06| Industrial Newsroom - All News for Today
Respectively, normally off 100 V GaN transistors GS61002P, GS61004P, GS61006P, and GS61008P are 20 A/21 mΩ, 40 A/11 mΩ, 60 A/8 mΩ, and 80 A/5 mΩ parts. Half bridge device, GS71008P (80 A/5 mΩ), is also available. Enhancement mode parts feature reverse current capability, source-sense for optimal high speed design, and minimal Total Gate Charge and Reverse Recovery Charge. RoHS-compliant, near chipscale, embedded GaNPX package minimizes inductance and optimizes thermal performance. This story is related to the following:Gallium Nitride (GaN) Transistors |
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gan
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100v
Normally-Off 650 V GaN Transistors aid high-speed system design.
2014-05-30 14:31:06| Industrial Newsroom - All News for Today
Normally-off 650 V GaN transistors GS66502P, GS66504P, GS66506P, and GS66508P are, respectively, 8.5 A/165 mΩ, 17 A/82 mΩ, 25 A/55 mΩ, and 34 A/41 mΩ parts. Also available, GS43106L is 30 A/60 mΩ cascode. Reverse current capability, zero reverse recovery charge, and source-sense optimize high-speed design. These RoHS-compliant devices come in near chipscale, embedded GaNPX package that optimizes thermal performance as well as eliminates wire bonds and thereby minimizes inductance. This story is related to the following:Gallium Nitride (GaN) Transistors |
Cree Introduces New Low Cost, High Power GaN RF Transistors To Enable Higher Data Rate Telecom Systems
2014-05-30 12:47:48| rfglobalnet Home Page
Cree, Inc. introduces a new family of high power GaN RF transistors based on an innovative plastic package design, which leverages the superior RF performance of GaN in a low-cost platform.
Cree Introduces New Low Cost, High Power GaN RF Transistors To Enable Higher Data Rate Telecom Systems
2014-05-30 12:47:48| electronicsweb Home Page
Cree, Inc. introduces a new family of high power GaN RF transistors based on an innovative plastic package design, which leverages the superior RF performance of GaN in a low-cost platform.
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