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Transphorm to Present Industry Sessions on GaN at APEC 2014
2014-02-28 05:00:00| Industrial Newsroom - All News for Today
Leading GaN (Gallium Nitride) innovator to offer an update on energy-efficient and compact power conversion technology; one presentation addresses long-term reliability of GaN devices, the other deals with the impact of high-frequency switching on magnetic devices.<br /> <br /> GOLETA, Calif. — Transphorm Inc. today announced that it will present two "Industry Sessions" presentations at APEC 2014. Firmly establishing itself at the forefront of GaN (Gallium Nitride) technology, Transphorm ...This story is related to the following:Gallium Nitride (GaN) Transistors | Silicon Transistors
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gan
Advantech Wireless Announces The Release Of New 10kW S-Band GaN Based Solid State Pulse Amplifier
2014-02-25 07:52:01| rfglobalnet News Articles
Advantech Wireless Inc., a privately-held Canadian corporation and manufacturer of Satellite, RF Equipment and Microwave Systems recently announced the release of its new 10kW S-band Solid State Pulse Amplifier.
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Advantech Wireless Announces The Release Of New 10kW S-Band GaN Based Solid State Pulse Amplifier
2014-02-25 07:52:01| wirelessdesignonline News Articles
Advantech Wireless Inc., a privately-held Canadian corporation and manufacturer of Satellite, RF Equipment and Microwave Systems recently announced the release of its new 10kW S-band Solid State Pulse Amplifier.
Tags: state
based
release
solid
Agilent Technologies Simulation And Modeling Software Selected By Nitronex For High-Power GaN Design
2014-02-13 04:01:10| rfglobalnet News Articles
Agilent Technologies Inc. recently announced that Nitronex, a GaAs labs company and leading producer of GaN-on-silicon RF power devices, has selected Agilent to provide a complete GaN design flow that spans both device modeling and circuit simulation.
Tags: software
design
selected
technologies
1.2-1.4 GHz GaN SSPA: VSL3622
2014-02-11 10:31:55| rfglobalnet Home Page
This amplifier utilizes GaN transistors to provide high gain, high efficiency and high saturated power.
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