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Richardson RFPD Introduces Two Ka-Band GaN On SiC Power Amplifiers From TriQuint
2014-04-25 03:07:39| wirelessdesignonline News Articles
Richardson RFPD, Inc. recently announces immediate availability and full design support capabilities for two Ka-band gallium nitride on silicon carbide (GaN on SiC) power amplifiers (PAs) from TriQuint.
Tags: power
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Richardson RFPD Introduces Two New GaN On SiC Low Noise Amplifiers From TriQuint
2014-04-08 09:03:56| wirelessdesignonline News Articles
Richardson RFPD, Inc. recently announces immediate availability and full design support capabilities for two new gallium nitride on silicon carbide (GaN on SiC) low noise amplifiers (LNAs) from TriQuint.
Tags: low
noise
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Richardson RFPD Introduces Two New GaN On SiC Low Noise Amplifiers From TriQuint
2014-04-08 09:03:56| rfglobalnet News Articles
Richardson RFPD, Inc. recently announces immediate availability and full design support capabilities for two new gallium nitride on silicon carbide (GaN on SiC) low noise amplifiers (LNAs) from TriQuint.
Tags: low
noise
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introduces
Breakthrough In GaN Manufacturing Technology
2014-04-08 07:19:24| rfglobalnet News Articles
Scientists from Ammono and the Institute of High Pressure Physics of the Polish Academy of Sciences (Unipress) have conceived a new proprietary breakthrough technology, which allows cheap and fast production of ammonothermal GaN on the basis of hybrid Ammono-HVPE GaN seeds.
Tags: technology
manufacturing
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Raytheon Hits Another Major Milestone With GaN
2014-04-04 06:58:17| rfglobalnet News Articles
Raytheon Company (NYSE:RTN) has achieved another significant milestone for next generation Gallium Nitride (GaN) Radio Frequency (RF) semiconductor technology.
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milestone
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