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Efficient Power Conversion (EPC) Introduces Extremely Fast, Small Monolithic Gallium Nitride Power Transistor Half Bridge Operating Over 2 MHz, Ideal For Class-D Audio

2015-08-25 08:58:35| electronicsweb News Articles

EPC announces the EPC2106, an enhancement-mode monolithic GaN transistor half bridge

Tags: power small audio fast


High-Temperature Recess For Normally-Off Gallium Nitride Transistors

2015-07-14 10:55:46| rfglobalnet Home Page

Researchers in China and Hong Kong have claimed the highest output power density and power-added efficiency reported to date for gallium nitride (GaN)-based enhancement-mode metal-insulator-semiconductor high-electron-mobility transistors (MIS-HEMTs) at 4GHz and in pulsed-mode.

Tags: recess transistors nitride gallium


Gallium Nitride RF Devices for Harsh Military Environments

2015-06-23 14:42:38| rfglobalnet Downloads

Today’s advanced military systems – including phased array radar, communications systems and EW sensors – require high-frequency, high-bandwidth, high-power, high-efficiency devices. These applications are where GaN differentiates itself from other materials. GaN devices can operate at higher bias voltages, which provides several advantages at both the system/subsystem and circuit level, leading to a proportional decrease in current requirement for the circuit. The bottom line: GaN improves the system-level trade-off of size, weight, and power.

Tags: military devices environments harsh


GaN Systems Showcases New High Power Gallium Nitride Power Transistor for First Time in China and Demonstrates Real Customer Applications at PCIM Asia

2015-06-17 12:31:10| Industrial Newsroom - All News for Today

New device expands broadest range of GaN devices on market: China important to growth as sales of GaN power transistors accelerate OTTAWA, Ontario GaN Systems, the leading developer of gallium nitride power switching semiconductors, is exhibiting at PCIM Asia, Shanghai from June 24 26 and is showcasing a new...

Tags: time high real power


IDT And EPC Collaborate To Integrate Gallium Nitride And Silicon For Faster, Higher Efficiency Semiconductor Devices

2015-05-26 05:42:11| rfglobalnet Home Page

Integrated Device Technology, Inc. (IDT) recently announced its collaboration with Efficient Power Conversion (EPC) to develop technology based on Gallium nitride (GaN), a semiconductor material widely recognized for its speed and efficiency.

Tags: higher devices faster efficiency


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