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Efficient Power Conversion (EPC) Introduces Plug And Play 97% Efficient Half-Bridge Converter DrGaNPLUS Evaluation Board Featuring Gallium Nitride Transistors

2014-05-23 07:40:32| electronicsweb Home Page

Providing an easy-to-use way for power systems designers to evaluate the exceptional performance of gallium nitride transistors, Efficient Power Conversion Corporation (EPC) introduces DrGaNPLUSevaluation boards

Tags: board power play evaluation


Transphorm Obtains Exclusive Licensing Rights To Furukawa Electric's Gallium Nitride (GaN) Patent Portfolio

2014-05-20 08:05:15| rfglobalnet Home Page

Transphorm Inc. today announced that it has obtained a sole worldwide license to Furukawa Electric Co., Ltd.'s extensive Gallium Nitride (GaN) power device portfolio that includes approximately 40 U.S. issued patents and 110 Japanese issued patents.

Tags: rights exclusive portfolio patent


Gallium Nitride (GaN) Semiconductor Devices (Discrete & IC) And Substrate Wafer Market By Technology, Application, Product, Device & By Geography - Forecast & Analysis To 2013 - 2022

2014-04-04 05:52:23| rfglobalnet Home Page

Research and Markets (http://www.researchandmarkets.com/research/w29grv/gallium_nitride) has announced the addition of the"Gallium Nitride (GaN) Semiconductor Devices (Discrete & IC) and Substrate Wafer Market by Technology, Application, Product, Device & by Geography - Forecast & Analysis to 2013 - 2022"report to their offering.

Tags: to product technology market


Gallium Nitride (GaN) Semiconductor Devices (Discrete & IC) And Substrate Wafer Market Worth $15607.85M By 2022

2014-03-25 06:16:50| rfglobalnet News Articles

The report"Gallium Nitride (GaN) Semiconductor Devices (Discrete & IC) and Substrate Wafer Marketby Technology, Application, Product, Device, & by Geography - Forecast & Analysis to 2013 - 2022", published by MarketsandMarkets, defines and segments the global GaN (Gallium Nitride) market, it is expected to reach$15607.85 Millionby 2022 with analysis and forecasting the revenues and volumes for the overall market and all its sub-segments.

Tags: by market worth devices


A New Generation Of Gallium Nitride (GaN) Based Solid State Power Amplifiers For Satellite Communication

2014-01-10 13:00:23| rfglobalnet Home Page

The introduction of Gallium Nitride High Electron Mobility Transistors (GaN HEMT) in early 2000 has left an undeniable mark on the entire satellite communication landscape. It is now possible for the first time since the introduction of the Solid State Microwave Technology to design and manufacture Power Amplifiers that exceed by several orders of magnitude the reliability, linearity, power density and energy efficiency of all existing technologies, being GaAs, LDMOS, or TWT.By C. Damian, VP Product Line Management and Business Development, and D. Gelerman, President and CEO, Advantech Wireless Inc.

Tags: state based power communication


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