je.st
news
Tag: nitride
Saint-Gobain's CarboTherm(TM) Boron Nitride Fillers for Thermally Conductive, Dielectric ...
2013-12-02 06:00:00| Industrial Newsroom - All News for Today
Amherst, NY – Saint-Gobain Ceramic Materials, a pioneer in advanced material solutions, announced today that its range of CarboTherm™ boron nitride thermal management fillers will be on display at the upcoming Compounding World Forum 2013, December 10-11, Booth #2, Hilton City Avenue, Philadelphia.<br /> <br /> CarboTherm Boron Nitride fillers enable manufacturing of thermally conductive, dielectric plastic compounds, allowing compounders to enter new markets for injection molded ...This story is related to the following:Materials and Material ProcessingInsulation Fillers | Boron Nitride |
Tags: dielectric
conductive
thermally
boron
GaN Systems Showcases Gallium Nitride Power Semiconductors at iPower 2013 - Presents Paper on ...
2013-11-01 06:00:00| Industrial Newsroom - All News for Today
Leading experts discuss latest power electronic technologies at University of Warwick 27-28 November<br /> <br /> OTTAWA, Ontario -- GaN Systems Inc, a leading developer of gallium nitride power switching semiconductors, is exhibiting and presenting a technical paper at iPower 2013 Conference and Exhibition, Warwick University on 27 and 28 November. Organised by IMAPS-UK and NMI in conjunction with the University’s Electronics, Power and Microsystems Research Group, iPower 2013 brings ...This story is related to the following:Power Semiconductors | Power Transistors
The Pulsed RF Power Semiconductor Device Markets Will Exceed $250M By 2018 With Gallium Nitride Driving Growth
2013-10-29 07:20:09| rfglobalnet News Articles
Markets for pulsed RF power devices up to 18 GHz are expected to show continued solid growth over the next five years despite the current economic turmoil and cuts in defense spending.
Tags: power
growth
device
driving
The Pulsed RF Power Semiconductor Device Markets Will Exceed $250M By 2018 With Gallium Nitride Driving Growth, Says ABI Research
2013-10-28 05:05:26| rfglobalnet News Articles
Markets for pulsed RF power devices up to 18 GHz are expected to show continued solid growth over the next five years despite the current economic turmoil and cuts in defense spending
Tags: power
research
growth
device
Efficient Power Conversion (EPC) Blurs The Line Between Power And RF Transistors With Family Of Gallium Nitride Transistors Capable Of Amplification Into The Multiple GHz Range
2013-09-27 08:27:53| rfglobalnet News Articles
Efficient Power Conversion Corporation, the world’s leader in enhancement-mode gallium nitride on silicon (eGaN) power FETs extends its family of high-speed, high performance transistors with the EPC8000 family of products.
Sites : [1] [2] [3] [4] [5] [6] [7] [8] [9] [10] [11] [12] [13] [14] next »