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Pulsed RF Power Semiconductor Device Markets Will Exceed $US300M By 2019 With Gallium Nitride Driving Growth, Says ABI Research

2014-09-23 10:21:05| rfglobalnet News Articles

Markets for pulsed RF power devices up to 18 GHz are expected to show continued growth over the next 5 years despite the current economic turmoil and cuts in defense spending. While their association with consumer spending fuels the volatility of many global electronics markets, pulsed RF power devices are supported by quite different priorities.

Tags: power research growth device

 

Leading Gallium Nitride Developer GaN Systems Signs Exclusive Worldwide Deal with Mouser ...

2014-09-04 06:00:00| Industrial Newsroom - All News for Today

Specialist distributor brings GaN Systems&#39; high power transistors to design engineers: ushers in era of smaller,  lighter and more efficient power electronics<br /> <br /> OTTAWA, Ontario &ndash; GaN Systems Inc, a leading developer of gallium nitride power switching semiconductors, today announced it is has signed an exclusive worldwide distribution agreement with Mouser Electronics. GaN Systems&#39; gallium nitride power transistors are based on its proprietary Island Technology® and ...This story is related to the following:Power Transistors | Switching Transistors |

Tags: systems leading deal worldwide

 
 

GaN Systems to Show New Gallium Nitride High Power Transistors at Energy Conversion Congress ...

2014-09-01 06:00:00| Industrial Newsroom - All News for Today

Wide range of devices enable smaller, lighter and more efficient power electronics for a more sustainable energy future<br /> <br /> OTTAWA, Ontario &ndash; GaN Systems Inc, a leading developer of gallium nitride power switching semiconductors, is exhibiting its latest products at ECCE, the IEEE Energy Conversion Congress Expo being held in Pittsburgh, USA from September 14 &ndash; 18.  The event is the world&#39;s leading technical conference and exhibition focussing on next generation green ...This story is related to the following:Gallium Nitride (GaN) Transistors |

Tags: show high power systems

 

IEEE Power Electronics Society (PELS) Webinar, 'Using Gallium Nitride (GaN) FETs For Envelope Tracking Buck Converters'

2014-08-22 10:48:18| electronicsweb Home Page

An Efficient Power Conversion Corporation (EPC) expert on the application of gallium nitride transistors in envelope tracking power circuit design will conduct a one-hour webinar sponsored by the IEEE Power Electronics Society (PELS) on September 3rd from 11:00 AM to 12:00 PM (EDT)

Tags: power society electronics tracking

 

EDA Helps Establish An Independent European Supply Chain For Advanced Gallium Nitride Technologies

2014-07-04 11:21:05| rfglobalnet Home Page

New developments for the production of electronic components based on the efficient semiconductor gallium nitride help to move the European defence industry towards independence.

Tags: advanced supply independent technologies

 

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