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05.23.12 -- Gallium Nitride Power Transistors For High-Temperature Applications

2016-06-13 17:08:46| electronicsweb News Articles

05/23/12 ElectronicsWeb Newsletter

Tags: power applications transistors nitride

 

EPC Partners With Freebird Semiconductor For Development Of Radiation Hardened Gallium Nitride Power Conversion Systems For Satellite And Harsh Environment Applications

2016-04-15 07:08:58| rfglobalnet Home Page

Efficient Power Conversion Corporation (EPC), the leading provider of enhancement-mode gallium nitride power transistors, announces the signing of an agreement with Freebird Semiconductor Corporation, North Andover, Massachusetts to develop products for use in high reliability, space, and harsh environment applications based upon EPC’s eGaNtechnology.

Tags: power development systems applications

 
 

Silicon Nitride insulates high-power electronic devices.

2016-03-14 13:31:06| Industrial Newsroom - All News for Today

With thermal conductivity of 100 W/mK, Silicon Nitride serves as insulating substrate for power modules, high-frequency circuits, and LED mounting. High fracture toughness makes material resistant to impact and shocks. Product can be polished to surface roughness of Ra=0.02 µm and is wear-resistant. Supplied standard in sheet form measuring 100 x 100 mm with thickness of 0.32 mm, Silicon Nitride is also available as powder, rods, sheets, spheres, targets, and tubes.

Tags: electronic devices silicon nitride

 

Saint-Gobain to Present Boron Nitride Solutions at Ceramics Expo 2016

2016-02-24 11:31:09| Industrial Newsroom - All News for Today

Amherst, NY  Saint-Gobain Ceramic Materials, a pioneer in advanced material solutions, announced today that its range of Boron Nitride products will be on display at the upcoming Ceramics Expo, April 26 28, Booth #601, Cleveland. Boron Nitride ceramic material from Saint-Gobain is available in powders...

Tags: present solutions expo ceramics

 

HRL Laboratories' Breakthrough May Pave The Way For Gallium Nitride To Supplant Silicon In Integrated Circuits

2016-02-05 05:10:24| rfglobalnet Home Page

Researchers at HRL Laboratories, LLC, have achieved the first demonstration of gallium nitride (GaN) complementary metal-oxide-semiconductor (CMOS) field-effect-transistor (FET) technology, and in doing so have established that the semiconductor’s superior transistor performance can be harnessed in an integrated circuit.

Tags: integrated silicon circuits laboratories

 

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