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IDT And EPC Collaborate To Integrate Gallium Nitride And Silicon For Faster, Higher Efficiency Semiconductor Devices

2015-05-26 05:42:11| wirelessdesignonline News Articles

Integrated Device Technology, Inc. (IDT) recently announced its collaboration with Efficient Power Conversion (EPC) to develop technology based on Gallium nitride (GaN), a semiconductor material widely recognized for its speed and efficiency.

Tags: higher devices faster efficiency

 

Freescale Introduces Its First Gallium Nitride RF Power Transistor For Cellular Base Stations

2015-05-21 03:41:54| rfglobalnet Home Page

Freescale Semiconductor (NYSE: FSL) today introduced its first gallium nitride (GaN) RF power transistor for cellular base stations.

Tags: power base stations cellular

 
 

Freescale Introduces Its First Gallium Nitride RF Power Transistor For Cellular Base Stations

2015-05-21 03:41:54| wirelessdesignonline News Articles

Freescale Semiconductor (NYSE: FSL) today introduced its first gallium nitride (GaN) RF power transistor for cellular base stations.

Tags: power base stations cellular

 

Freescale Introduces Its First Gallium Nitride RF Power Transistor for Cellular Base Stations

2015-05-19 07:00:00| Freescale Press Releases

Freescale Introduces Its First Gallium Nitride RF Power Transistor for Cellular Base StationsFor more information click on title.

Tags: power base stations cellular

 

Gallium nitride power switching semiconductor company GaN Systems raises $20M in Series C

2015-05-08 12:55:35| Green Car Congress

Tags: company power systems series

 

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