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220 Watt Asymmetric Doherty Power Transistor: QPD2730 Datasheet

2016-05-16 15:41:34| rfglobalnet Home Page

The QPD2730 is a 220 Watt asymmetric Doherty power transistor composed of pre-matched, discrete GaN on SiC HEMTs. With an operational frequency range of 2.575 to 2.635 GHz, this transistor is ideal for W-CDMA/LTE, macrocell base station, active antenna, and asymmetric Doherty applications.

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70 W Discrete Power Transistor: TGF2957 Datasheet

2015-10-27 12:07:51| rfglobalnet Home Page

The TGF2957 is a 70W discrete GaN on SiC HEMT with an operating frequency in the DC – 12 GHz range, has a saturated output power of 48.6 dBm, and power gain of 19.2 dB at 3 GHz. The transistor is constructed with TriQuint’s proven TQGaN25 process and is useful for a wide variety of high efficiency applications including military and civilian radar, radio communications, and test instrumentation.

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70 W Discrete Power Transistor: TGF2957 Datasheet

2015-10-27 12:07:51| wirelessdesignonline Downloads

The TGF2957 is a 70W discrete GaN on SiC HEMT with an operating frequency in the DC – 12 GHz range, has a saturated output power of 48.6 dBm, and power gain of 19.2 dB at 3 GHz. The transistor is constructed with TriQuint’s proven TQGaN25 process and is useful for a wide variety of high efficiency applications including military and civilian radar, radio communications, and test instrumentation.

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55 W Discrete Power Transistor: TGF2956 Datasheet

2015-10-27 12:03:08| rfglobalnet Home Page

The TGF2956 is a 55W discrete GaN on SiC HEMT with an operating frequency in the DC – 12 GHz range, has a saturated output power of 47.6 dBm, and power gain of 19.3 dB at 3 GHz. The transistor is constructed with TriQuint’s proven TQGaN25 process and is useful for a wide variety of high efficiency applications including military and civilian radar, radio communications, and test instrumentation.

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55 W Discrete Power Transistor: TGF2956 Datasheet

2015-10-27 12:03:08| wirelessdesignonline Downloads

The TGF2956 is a 55W discrete GaN on SiC HEMT with an operating frequency in the DC – 12 GHz range, has a saturated output power of 47.6 dBm, and power gain of 19.3 dB at 3 GHz. The transistor is constructed with TriQuint’s proven TQGaN25 process and is useful for a wide variety of high efficiency applications including military and civilian radar, radio communications, and test instrumentation.

Tags: power discrete transistor datasheet

 

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