je.st
news
Tag: power transistor
100W, 32V, DC-3.5 GHz Power Transistor: TGF2819-FS Datasheet
2015-07-29 15:41:00| rfglobalnet Downloads
The TGF2819-FS is a 100W discrete GaN on SiC HEMT with an operating frequency in the DC – 3.5 GHz range, and an operating voltage of 32V. The transistor is constructed with TriQuint’s proven TQGaN25HV process and is useful for a wide variety of applications including military and civilian radar, radio communications, and avionics.
Tags: power
ghz
transistor
datasheet
285W, 36V, DC-2 GHz Power Transistor: T1G2028536-FL Datasheet
2015-07-29 15:36:50| rfglobalnet Downloads
The T1G2028536-FL is a 285W discrete GaN on SiC HEMT with an operating frequency in the DC – 2 GHz range, and an operating voltage of 36V. The transistor is constructed with TriQuint’s proven TQGaN25HV process and is useful for a wide variety of applications including military and civilian radar, radio communications, and avionics.
Tags: power
ghz
transistor
datasheet
GaN Systems Showcases New High Power Gallium Nitride Power Transistor for First Time in China and Demonstrates Real Customer Applications at PCIM Asia
2015-06-17 12:31:10| Industrial Newsroom - All News for Today
New device expands broadest range of GaN devices on market: China important to growth as sales of GaN power transistors accelerate OTTAWA, Ontario GaN Systems, the leading developer of gallium nitride power switching semiconductors, is exhibiting at PCIM Asia, Shanghai from June 24 26 and is showcasing a new...
GaN Power Transistor offers current capability up to 60 A.
2015-05-22 14:31:06| Industrial Newsroom - All News for Today
Based on FOM Island Technology® die design, GS66516T 650 V E-Mode Power Switch features topside cooling configuration, which allows it to be cooled using conventional heat sink or fan cooling. Device includes reverse current capability, integral source sense, and zero reverse recovery loss. Housed in 9.0 x 7.6 x 0.45 mm GaNPX™ packaging, transistor is suited for on-board battery chargers, 400 V DC-DC conversion, inverters, UPS and VFD motor drives, and AC-DC power supplies.
MACOM Furthers GaN Portfolio Leadership With New Wideband Power Transistor At IMS 2015
2015-05-21 04:06:34| rfglobalnet Home Page
M/A-COM Technology Solutions Inc. (“MACOM”), a leading supplier of high-performance analog RF, microwave and optical semiconductor products, recently announced the new NPT2022, a wideband transistor optimized for DC-2 GHz operation and built using a proprietary Gallium Nitride (GaN) on Silicon (Si) process.
Tags: power
leadership
portfolio
gan
Sites : [1] [2] [3] [4] [5] [6] [7] [8] [9] [10] [11] [12] [13] [14] [15] next »