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12 W Discrete Power Transistor: TGF2953 Datasheet

2015-10-27 11:51:40| wirelessdesignonline Downloads

The TGF2953 is a 12W discrete GaN on SiC HEMT with an operating frequency in the DC – 12 GHz range, has a saturated output power of 41.2 dBm, and power gain of 18.2 dB at 3.5 GHz. The transistor is constructed with TriQuint’s proven TQGaN25 process and is useful for a wide variety of high efficiency applications including military and civilian radar, radio communications, and test instrumentation.

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7 W Discrete Power Transistor: TGF2952 Datasheet

2015-10-27 11:45:50| rfglobalnet Home Page

The TGF2952 is a 7W discrete GaN on SiC HEMT with an operating frequency in the DC – 14 GHz range, has a saturated output power of 38.4 dBm, and power gain of 20.4 dB at 3 GHz. The transistor is constructed with TriQuint’s proven TQGaN25 process and is useful for a wide variety of high efficiency applications including military and civilian radar, radio communications, and test instrumentation.

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7 W Discrete Power Transistor: TGF2952 Datasheet

2015-10-27 11:45:50| wirelessdesignonline Downloads

The TGF2952 is a 7W discrete GaN on SiC HEMT with an operating frequency in the DC – 14 GHz range, has a saturated output power of 38.4 dBm, and power gain of 20.4 dB at 3 GHz. The transistor is constructed with TriQuint’s proven TQGaN25 process and is useful for a wide variety of high efficiency applications including military and civilian radar, radio communications, and test instrumentation.

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Efficient Power Conversion Corporation (EPC) Expands eGaN Integrated Circuit Family With Dual Enhancement-Mode 120 Volt, 60 Milliohm Power Transistor Ideal For Wireless Power Transfer

2015-09-15 07:45:43| wirelessdesignonline News Articles

Efficient Power Conversion Corporation introduces the EPC2110 as the newest member of EPC’s family of enhancement-mode gallium nitride integrated circuits. The EPC2110 is a dual (common-source) eGaN FET configuration in a tiny 1.35 mm x 1.35 mm, 120 VDS, 20 A device with a maximum RDS(on) of 60 milliohms with 5 V applied to the gate.

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90W Discrete Power Transistor: TGF2023-2-20 Datasheet

2015-09-01 18:08:34| rfglobalnet Downloads

The TGF2023-2-20 is a 90W discrete GaN on SiC HEMT with an operating frequency in the DC – 18 GHz range, and an operating voltage of Dec-32V. The transistor is constructed with TriQuint’s proven TQGaN25 process and is useful for a wide variety of applications including military and civilian radar, radio communications, and test instrumentation.

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