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18W, 28V, DC-6 GHz Power Transistor: T2G6001528-Q3 Datasheet
2015-09-01 16:54:37| rfglobalnet Downloads
The T2G6001528-Q3 is an 18W discrete GaN on SiC HEMT with an operating frequency in the DC – 6 GHz range, and an operating voltage of 28V. The transistor is constructed with TriQuint’s proven TQGaN25 process and is useful for a wide variety of applications including military and civilian radar, radio communications, and test instrumentation.
Tags: power
ghz
transistor
datasheet
7W, 28V, DC-6 GHz Power Transistor: T2G6000528-Q3 Datasheet
2015-09-01 16:45:36| rfglobalnet Downloads
The T2G6000528-Q3 is a 7W discrete GaN on SiC HEMT with an operating frequency in the DC – 6 GHz range, and an operating voltage of 28V. The transistor is constructed with TriQuint’s proven TQGaN25 process and is useful for a wide variety of applications including military and civilian radar, radio communications, and test instrumentation.
Tags: power
ghz
transistor
datasheet
15W, 28V, DC-6 GHz Power Transistor: T2G6001528-SG Datasheet
2015-09-01 16:22:08| rfglobalnet Downloads
The T2G6001528-SG is a 15W discrete GaN on SiC HEMT with an operating frequency in the DC – 6 GHz range, and an operating voltage of 28V. The transistor is constructed with TriQuint’s proven TQGaN25 process and is useful for a wide variety of applications including military and civilian radar, radio communications, and test instrumentation.
Tags: power
ghz
transistor
datasheet
30W, 32V, DC-4 GHz Power Transistor: TQP0104 Datasheet
2015-09-01 15:59:15| rfglobalnet Downloads
The TQP0104 is a 30W discrete GaN on SiC HEMT with an operating frequency in the DC – 4 GHz range, and an operating voltage of 32V. The transistor is constructed with TriQuint’s proven TQGaN25HV process and is useful for a wide variety of applications including military and civilian radar, radio communications, and avionics.
Tags: power
ghz
transistor
datasheet
15W, 32V, DC-4 GHz Power Transistor: TQP0103 Datasheet
2015-09-01 15:47:05| rfglobalnet Downloads
The TQP0103 is a 15W discrete GaN on SiC HEMT with an operating frequency in the DC – 4 GHz range, and an operating voltage of 32V. The transistor is constructed with TriQuint’s proven TQGaN25HV process and is useful for a wide variety of applications including military and civilian radar, radio communications, and avionics.
Tags: power
ghz
transistor
datasheet
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