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40 W Discrete Power Transistor: TGF2955 Datasheet

2015-10-27 11:59:22| rfglobalnet Home Page

The TGF2955 is a 40W discrete GaN on SiC HEMT with an operating frequency in the DC – 12 GHz range, has a saturated output power of 46.4 dBm, and power gain of 19.2 dB at 3 GHz. The transistor is constructed with TriQuint’s proven TQGaN25 process and is useful for a wide variety of high efficiency applications including military and civilian radar, radio communications, and test instrumentation.

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40 W Discrete Power Transistor: TGF2955 Datasheet

2015-10-27 11:59:22| wirelessdesignonline Downloads

The TGF2955 is a 40W discrete GaN on SiC HEMT with an operating frequency in the DC – 12 GHz range, has a saturated output power of 46.4 dBm, and power gain of 19.2 dB at 3 GHz. The transistor is constructed with TriQuint’s proven TQGaN25 process and is useful for a wide variety of high efficiency applications including military and civilian radar, radio communications, and test instrumentation.

Tags: power discrete transistor datasheet

 
 

27 W Discrete Power Transistor: TGF2954 Datasheet

2015-10-27 11:54:27| rfglobalnet Home Page

The TGF2954 is a 27W discrete GaN on SiC HEMT with an operating frequency in the DC – 12 GHz range, has a saturated output power of 44.5 dBm, and power gain of 19.5 dB at 3 GHz. The transistor is constructed with TriQuint’s proven TQGaN25 process and is useful for a wide variety of high efficiency applications including military and civilian radar, radio communications, and test instrumentation.

Tags: power discrete transistor datasheet

 

27 W Discrete Power Transistor: TGF2954 Datasheet

2015-10-27 11:54:27| wirelessdesignonline Downloads

The TGF2954 is a 27W discrete GaN on SiC HEMT with an operating frequency in the DC – 12 GHz range, has a saturated output power of 44.5 dBm, and power gain of 19.5 dB at 3 GHz. The transistor is constructed with TriQuint’s proven TQGaN25 process and is useful for a wide variety of high efficiency applications including military and civilian radar, radio communications, and test instrumentation.

Tags: power discrete transistor datasheet

 

12 W Discrete Power Transistor: TGF2953 Datasheet

2015-10-27 11:51:40| rfglobalnet Home Page

The TGF2953 is a 12W discrete GaN on SiC HEMT with an operating frequency in the DC – 12 GHz range, has a saturated output power of 41.2 dBm, and power gain of 18.2 dB at 3.5 GHz. The transistor is constructed with TriQuint’s proven TQGaN25 process and is useful for a wide variety of high efficiency applications including military and civilian radar, radio communications, and test instrumentation.

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