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Tag: power transistor
2x120W, 36V, DC-3.5 GHz Power Transistor: T1G4020036-FS Datasheet
2015-09-01 13:18:37| rfglobalnet Downloads
The T1G4020036-FS is a 100W discrete GaN on SiC HEMT with an operating frequency in the DC – 3.5 GHz range, and an operating voltage of 36V. The transistor is constructed with TriQuint’s proven TQGaN25HV process and is useful for a wide variety of applications including military and civilian radar, radio communications, and avionics.
Tags: power
ghz
transistor
datasheet
2x120W, 36V, DC-3.5 GHz Power Transistor: T1G4020036-FL Datasheet
2015-09-01 13:06:10| rfglobalnet Downloads
The T1G4020036-FL is a 100W discrete GaN on SiC HEMT with an operating frequency in the DC – 3.5 GHz range, and an operating voltage of 36V. The transistor is constructed with TriQuint’s proven TQGaN25HV process and is useful for a wide variety of applications including military and civilian radar, radio communications, and avionics.
Tags: power
ghz
transistor
datasheet
120W, 36V, DC-3.5 GHz Power Transistor: T1G4012036-FS Datasheet
2015-09-01 12:47:18| rfglobalnet Home Page
The T1G4012036-FS is a 100W discrete GaN on SiC HEMT with an operating frequency in the DC – 3.5 GHz range, and an operating voltage of 36V. The transistor is constructed with TriQuint’s proven TQGaN25HV process and is useful for a wide variety of applications including military and civilian radar, radio communications, and avionics.
Tags: power
ghz
transistor
datasheet
120W, 36V, DC-3.5 GHz Power Transistor: T1G4012036-FL Datasheet
2015-09-01 12:38:37| rfglobalnet Downloads
The T1G4012036-FL is a 100W discrete GaN on SiC HEMT with an operating frequency in the DC – 3.5 GHz range, and an operating voltage of 36V. The transistor is constructed with TriQuint’s proven TQGaN25HV process and is useful for a wide variety of applications including military and civilian radar, radio communications, and avionics.
Tags: power
ghz
transistor
datasheet
100W, 32V, DC-3.5 GHz Power Transistor: TGF2819-FL Datasheet
2015-09-01 12:24:46| rfglobalnet Downloads
The TGF2819-FL is a 100W discrete GaN on SiC HEMT with an operating frequency in the DC – 3.5 GHz range, and an operating voltage of 32V. The transistor is constructed with TriQuint’s proven TQGaN25HV process and is useful for a wide variety of applications including military and civilian radar, radio communications, and avionics.
Tags: power
ghz
transistor
datasheet
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