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12.23.14 -- Raytheon GaN Tech Validated For Space | Microwave Imaging Could Improve Breast Cancer Screening

2014-12-22 08:39:13| rfglobalnet News Articles

12/23/14 RF Globalnet Newsletter

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Custom MMIC Introduces New 4-8 GHz GaN Low-Noise Amplifier

2014-12-19 01:40:05| rfglobalnet Home Page

Custom MMIC, a developer of performance-driven monolithic microwave integrated circuits (MMICs), is pleased to announce the release of the CMD219, a 4-8 GHz low noise amplifier (LNA) in die form, to their growing line of standard GaN amplifier products.

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Advantech Wireless Releases New 2.5kW TROPO C-Band Modular Solid State GaN Power Amplifier With Built In Redundancy

2014-12-19 01:07:24| rfglobalnet Home Page

Advantech Wireless Inc., a privately-held Canadian corporation and manufacturer of Satellite, RF Equipment and Microwave Systems recently announced the release of the New 2.5kW TROPO C-Band Modular GaN based Solid State Power Amplifier.

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Low-Noise GaN LNA features high power survivability.

2014-12-15 14:32:34| Industrial Newsroom - All News for Today

Supplied in die form, CMD218 offers gain of 22 dB, output of 1 dB, compression point of +19.5 dBm, and noise figure of <1.25 dB across 5–9 GHz frequency range. Unit can, without input limiter, survive incident power levels up to 5 W without any degradation in performance. With 50 Ω matched design that eliminates need for external DC blocks and RF port matching, LNA operates from 5–28 V supply and draws 100 mA typ quiescent current. Negative gate voltage is required for proper operation.

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Cree Releases Industry's Highest Power 50V GaN HEMT (320W)

2014-12-12 04:08:12| rfglobalnet Home Page

Cree, Inc., a leading global supplier of silicon carbide (SiC) and gallium nitride (GaN) wafers and devices, has extended its family of 50V discrete GaN high electron mobility transistor (HEMT) die with the release of three new components: a 20W, 6GHz die; a 75W, 6GHz die; and a 320W, 4GHz die.

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