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Transphorm and Fujitsu Semiconductor Announce the Start of Mass Production of Transphorm's GaN Power Devices
2015-02-02 11:32:10| Industrial Newsroom - All News for Today
Production at CMOS-compatible fab enables GaN to meet the increasing demand of the market GOLETA, Calif., -- Transphorm Inc., Transphorm Japan Inc., and Fujitsu Semiconductor Limited announced today that Fujitsu Semiconductor group's CMOS-compatible, 150mm wafer fab in Aizu-Wakamatsu, Fukushima, Japan, has started...
Tags: start
power
production
mass
GaN Thermal Analysis For High-Performance Systems
2015-01-21 16:39:33| rfglobalnet Downloads
This paper addresses Qorvo’s integrated approach to thermal design that leverages modeling, empirical measurements (including micro-Raman thermography), and finite element analysis (FEA) for high performance microwave GaN HEMT devices and MMICs. This methodology is highly effective and has been empirically validated. By properly addressing FEA boundary condition assumptions and the limitations of infrared microscopy, resulting model calculations are more accurate at both the product and end application level than traditional methods based on lower power density technology.
Tags: systems
analysis
thermal
gan
Richardson RFPD Introduces Two New L-Band 90W GaN Modules For Avionics And Radar Applications From MACOM
2015-01-07 07:18:12| rfglobalnet Home Page
Richardson RFPD, Inc. announced recently the availability and full design support capabilities for two new L-band 90W GaN modules from M/A-COM Technology Solutions.
Tags: from
applications
modules
radar
GaN Low-Noise Amplifier features 23 dB gain.
2014-12-24 14:31:06| Industrial Newsroom - All News for Today
Able to survive input power levels up to 5 W without front-end limiter, 4–8 GHz Model CMD219 features output of 1 dB, compression point of +18 dBm, and noise figure of 1.1 dB across operating bandwidth. Typical bias conditions are Vdd = 10 V at 100 mA and Vgg = -2.3 V, although Vdd can vary from 5–28 V. Suitable applications include point-to-point and point-to-multipoint radios, military and space, and test instrumentation.
Tags: features
gain
amplifier
gan
Lux Research: GaN-on-Si will dominate the GaN power electronics market for the next decade, reaching $1B by 2024
2014-12-22 11:55:46| Green Car Congress
Tags: power
research
market
electronics
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