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MACOM Furthers GaN Portfolio Leadership With New Wideband Power Transistor At IMS 2015

2015-05-21 04:06:34| rfglobalnet Home Page

M/A-COM Technology Solutions Inc. (“MACOM”), a leading supplier of high-performance analog RF, microwave and optical semiconductor products, recently announced the new NPT2022, a wideband transistor optimized for DC-2 GHz operation and built using a proprietary Gallium Nitride (GaN) on Silicon (Si) process.

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GaN Wideband Transistor: MAGX-011086 Datasheet

2015-04-20 12:10:01| rfglobalnet Downloads

The MAGX-011086 is a wideband transistor optimized for operations in DC - 6 GHz, with operating output power levels of 4W (36 dBm) in an industry standards, and is specifically designed for saturated and linear operation in high bandwidth applications.

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GaN Wideband Transistor: MAGX-011086

2015-04-20 12:03:00| rfglobalnet Home Page

The MAGX-011086 is a wideband transistor optimized for operations in DC - 6 GHz. This GaN HEMT is made with operating output power levels of 4W (36 dBm) in an industry standard, low inductance, and a surface mount QFN package.

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5W GaN Transistor From RFMW Supports 5GHz ISM

2015-03-20 02:35:57| rfglobalnet Home Page

RFMW, Ltd. announces design and sales support for a high efficiency, GaN, 5 watt, input-matched transistor covering the 5GHz ISM bands. The TriQuint (Qorvo) TGF3020-SM provides 5.7W P3dB at 5.4GHz.

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5W GaN Transistor From RFMW Supports 5GHz ISM

2015-03-20 02:35:57| wirelessdesignonline News Articles

RFMW, Ltd. announces design and sales support for a high efficiency, GaN, 5 watt, input-matched transistor covering the 5GHz ISM bands. The TriQuint (Qorvo) TGF3020-SM provides 5.7W P3dB at 5.4GHz.

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