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Ampleon GaN RF Transistor Family Complements LDMOS Portfolio With High-Efficiency And Wideband Solutions For Mobile Broadband

2016-05-20 08:15:41| rfglobalnet Home Page

Ampleon recently announced its second generation of 50 Volts 0.5 um GaN on SiC RF power transistors, dedicated for mobile broadband applications.

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Broadband General Purpose GaN Transistor: IGN0160UM10 Datasheet

2016-05-19 12:58:59| rfglobalnet Home Page

The IGN0160UM10 is a broadband GaN transistor ideal for use in general purpose applications. It is an un-matched internal impedance device with depletion mode, requires a negative gate voltage and bias sequencing, and is specified for use under Class AB operation.

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Broadband General Purpose GaN Transistor: IGN0160UM10

2016-05-19 12:56:42| rfglobalnet Home Page

Integra Technologies offers the IGN0160UM10 broadband GaN transistor for use in general purpose applications. The transistor operates throughout the 0.100 through 6.00 GHz frequency range, and is designed to utilize GaN on SiC HEMT technology.

Tags: general purpose broadband general purpose

 

100 W GaN Amplifier And Doherty Transistor For Wireless Infrastructures

2016-05-16 15:32:24| rfglobalnet Home Page

Qorvo offers the TGM2635-CP 100W GaN as an X-band, high power MMIC amplifier fabricated on Qorvo’s GaN on SiC Process. Its package is a 10-lead bolt-down with a cure Cu base for superior thermal management. Both RF ports allow for simple system integration, making the amplifier ideally suited for both military and commercial x-band radar systems and data links.

Tags: wireless amplifier gan infrastructures

 

GaN L-Band Avionics Transistor: IGN1011L1200 Datasheet

2016-04-11 17:49:41| rfglobalnet Downloads

The IGN1011L1200 is a GaN avionics transistor capable of operation within the L-band (1.030 GHz – 1.090 GHz). This avionics transistor utilizes GEN-2 GaN on SiC HEMT technology and comes with depletion mode. It is housed in a metal based package sealed with a ceramic-epoxy lid.

Tags: gan transistor datasheet avionics

 

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