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5W, 32V, DC-12 GHz GaN RF Transistor: TGF2977-SM Datasheet

2015-12-10 09:48:32| rfglobalnet Downloads

The TGF2977-SM is a 5W discrete GaN on SiC HEMT with an operating frequency in the DC-12 GHz range, and an operating voltage of 32V. The transistor is constructed with TriQuint’s proven TQGaN25 process and is useful for a wide variety of applications including military and civilian radar, radio communications, and avionics.

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5W, 32V, DC-12 GHz GaN RF Transistor: TGF2977-SM Datasheet

2015-12-10 09:48:32| wirelessdesignonline Downloads

The TGF2977-SM is a 5W discrete GaN on SiC HEMT with an operating frequency in the DC-12 GHz range, and an operating voltage of 32V. The transistor is constructed with TriQuint’s proven TQGaN25 process and is useful for a wide variety of applications including military and civilian radar, radio communications, and avionics.

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Low-Resistance GaN Transistor reduces losses with step function.

2015-06-26 14:31:05| Industrial Newsroom - All News for Today

Offered in power conversion switch, 650 V blocking voltage transistor is based on design for Gallium Nitride (GaN) High Electron Mobility Transistors (HEMTs). This 650 V, 50 A GaN transistor achieves 12 Ω Rdson and accelerates extension of GaN-based technology from communications subsystems into power conversion subsystems.

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GaN Systems Showcases New High Power Gallium Nitride Power Transistor for First Time in China and Demonstrates Real Customer Applications at PCIM Asia

2015-06-17 12:31:10| Industrial Newsroom - All News for Today

New device expands broadest range of GaN devices on market: China important to growth as sales of GaN power transistors accelerate OTTAWA, Ontario GaN Systems, the leading developer of gallium nitride power switching semiconductors, is exhibiting at PCIM Asia, Shanghai from June 24 26 and is showcasing a new...

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GaN Power Transistor offers current capability up to 60 A.

2015-05-22 14:31:06| Industrial Newsroom - All News for Today

Based on FOM Island Technology® die design, GS66516T 650 V E-Mode Power Switch features topside cooling configuration, which allows it to be cooled using conventional heat sink or fan cooling. Device includes reverse current capability, integral source sense, and zero reverse recovery loss. Housed in 9.0 x 7.6 x 0.45 mm GaNPX™ packaging, transistor is suited for on-board battery chargers, 400 V DC-DC conversion, inverters, UPS and VFD motor drives, and AC-DC power supplies.

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