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Freescale RF Power GaN Transistor Delivers Breakthrough Wideband And Thermal Performance

2014-12-02 05:26:45| rfglobalnet News Articles

Freescale Semiconductor, the global leader in radio frequency (RF) power transistors, recently introduced the industry’s highest thermal and wideband performance GaN device with a 125 watts continuous wave (CW) GaN-on-SiC transistor.

Tags: power performance thermal delivers

 

Freescale RF Power GaN Transistor Delivers Breakthrough Wideband and Thermal Performance

2014-12-01 07:00:00| Freescale Press Releases

Freescale RF Power GaN Transistor Delivers Breakthrough Wideband and Thermal PerformanceFor more information click on title.

Tags: power performance thermal delivers

 
 

MACOM Announces Industry's Highest Power GaN L-Band Radar Transistor

2014-08-07 10:20:04| rfglobalnet Home Page

M/A-COM Technology Solutions Inc. (M/A-COM), a leading supplier of high performance analog semiconductor solutions, introducedrecently a new GaN on SiC HEMT Power Transistor for L-Band pulsed radar applications.

Tags: power highest radar announces

 

MACOM Announces Industry's Highest Power GaN L-Band Radar Transistor

2014-08-07 10:20:04| wirelessdesignonline News Articles

M/A-COM Technology Solutions Inc. (M/A-COM), a leading supplier of high performance analog semiconductor solutions, introducedrecently a new GaN on SiC HEMT Power Transistor for L-Band pulsed radar applications.

Tags: power highest radar announces

 

MACOM Announces High Efficiency 500 W GaN On SiC HEMT Pulsed Power Transistor For Avionics Applications

2014-02-07 05:25:25| rfglobalnet News Articles

M/A-COM Technology Solutions Inc. (“MACOM”), a leading supplier of high performance RF, microwave, and millimeter wave products, recently announced a new GaN on SiC HEMT Power Transistor for L-Band pulsed radar applications.

Tags: high power applications efficiency

 

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