Home › gan transistor
 

Keywords :   


Tag: gan transistor

Power Transistor leverages gallium nitride (GaN) technology.

2013-06-06 14:29:25| Industrial Newsroom - All News for Today

Fully qualified NPT1015 is 28 V, DC–2.5 GHz, 50 W power transistor with 15 dB saturated gain, 65% peak drain efficiency at 2 GHz, and thermal resistance is 1.9°C/W. During VSWR testing, all devices operated in saturated average power condition driven by 4,000 carrier 200 MHz wideband signal with 19.5 dB peak-to-average ratio. The devices showed 100% survivability and ~0.2 dB average change in saturated output power. SIGANTIC® GaN-on-Si process uses 4 in. silicon substrate. This story is related to the following:Power Transistors

Tags: power technology gan transistor

 

02.06.13 -- SiC RF Power Transistor, GaN MMIC Amplifiers, Signal Conditioning

2013-02-05 00:22:53| rfglobalnet News Articles

02/06/13RF Globalnet - Product Showcase

Tags: power signal conditioning sic

 

Sites : [1] [2] [3] [4] [5] [6] [7] [8]