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MACOM Extends GaN Leadership With 5W GaN Power Transistor In Ultra-Small Surface Mount Plastic Package

2013-10-10 05:40:49| rfglobalnet News Articles

M/A-COM Technology Solutions Inc. (“MACOM”), a leading supplier of high performance RF, microwave, and millimeter wave products, recently announced a new GaN unmatched wideband transistor in SOT-89 package that is ideally suited to 50 V operation in driver and power applications, at European Microwave Week 2013 in Nurnberg, Germany.

Tags: power surface package plastic

 

Microsemi 750 Watt GaN On SiC RF Power Transistor Delivers Unparalleled High-power Performance For Aviation Applications

2013-09-20 06:39:56| rfglobalnet News Articles

Microsemi Corporation(Nasdaq: MSCC),a leading provider of semiconductor solutions differentiated by power, security, reliability and performance, today expanded its family of radio frequency (RF) power transistors based on gallium nitride (GaN) high electron mobility transistor (HEMT) on silicon carbide (SiC) technology with a new 750 watt (W) RF transistor.

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MACOM's New 600 W GaN On SiC Pulsed Power Transistor Delivers Industry's Highest Reliability Rating And Lowest Pulse Droop

2013-09-20 04:15:38| rfglobalnet News Articles

M/A-COM Technology Solutions Inc. (“MACOM”), a leading supplier of high-performance RF, microwave and millimeter wave products, recently announced a new ceramic GaN on SiC HEMT Power Transistor for avionics applications.

Tags: power rating highest lowest

 

MACOM's New 600 W GaN On SiC Pulsed Power Transistor Delivers Industry's Highest Reliability Rating And Lowest Pulse Droop

2013-09-20 04:15:38| wirelessdesignonline News Articles

M/A-COM Technology Solutions Inc. (“MACOM”), a leading supplier of high-performance RF, microwave and millimeter wave products, recently announced a new ceramic GaN on SiC HEMT Power Transistor for avionics applications.

Tags: power rating highest lowest

 

GaN on SiC RF Power Transistor delivers 750 W peak power.

2013-09-19 14:31:47| Industrial Newsroom - All News for Today

Intended for air traffic control and collision avoidance equipment, MDSGN-750ELMV is based on gallium nitride (GaN) high electron mobility transistor (HEMT) on silicon carbide (SiC) technology. Solution delivers 750 W of peak power with 17 dB power gain and 70% typ drain efficiency when operating at 1,030/1,090 MHz. Transistor handles commercial Mode-S ELM (Extended Length Message) pulsing conditions for 1,030 MHz ground based interrogators and 1,090 MHz airborne transponders. This story is related to the following:RF Transistors |

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