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100 W GaN Amplifier And Doherty Transistor For Wireless Infrastructures

2016-05-16 15:32:24| rfglobalnet Home Page

Qorvo offers the TGM2635-CP 100W GaN as an X-band, high power MMIC amplifier fabricated on Qorvo’s GaN on SiC Process. Its package is a 10-lead bolt-down with a cure Cu base for superior thermal management. Both RF ports allow for simple system integration, making the amplifier ideally suited for both military and commercial x-band radar systems and data links.

Tags: wireless amplifier gan infrastructures

 

1400 CW Extremely Rugged Reliable RF Transistor Withstands VSWR > 65:1

2016-05-06 05:15:15| rfglobalnet Home Page

Ampleon recently announced the availability of the BLCU188XRS, a 1400W, CW capable, high power extremely rugged transistor constructed in a thermally optimized air cavity ACP3 copper flanged plastic package.

Tags: extremely reliable rugged transistor

 
 

04.26.16 -- Fastest Flexible Silicon Transistor Ever? | First mmWave Software Defined Radio

2016-04-25 03:56:45| rfglobalnet News Articles

04/26/16 RF Globalnet Newsletter

Tags: software radio defined flexible

 

With Simple Process, Engineers Fabricate Fastest Flexible Silicon Transistor

2016-04-22 04:34:36| rfglobalnet Home Page

One secret to creating the world’s fastest silicon-based flexible transistors: a very, very tiny knife.

Tags: process simple flexible engineers

 

With Simple Process, Engineers Fabricate Fastest Flexible Silicon Transistor

2016-04-22 04:34:36| wirelessdesignonline News Articles

One secret to creating the world’s fastest silicon-based flexible transistors: a very, very tiny knife.

Tags: process simple flexible engineers

 

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