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Toshiba Launches DMOS FET Transistor Arrays With Industry's First 1.5A Sink-Output Driver

2015-12-22 04:02:21| electronicsweb News Articles

Toshiba Corporation's Semiconductor & Storage Products Company recentlyannounced the launch of a new generation of highly efficient transistor arrays, the TBD62064A series and TBD62308A series, with a DMOS FET[1] type sink- output[2] driver

Tags: driver toshiba launches arrays

 

25W, 32V, DC-12 GHz GaN RF Transistor: TGF2979-SM Datasheet

2015-12-10 09:55:36| rfglobalnet Home Page

The TGF2979-SM is a 5W discrete GaN on SiC HEMT with an operating frequency in the DC-12 GHz range, and an operating voltage of 25V. The transistor is constructed with TriQuint’s proven TQGaN25 process and is useful for a wide variety of applications including military and civilian radar, radio communications, and avionics.

Tags: ghz gan transistor datasheet

 
 

25W, 32V, DC-12 GHz GaN RF Transistor: TGF2979-SM Datasheet

2015-12-10 09:55:36| wirelessdesignonline Downloads

The TGF2979-SM is a 5W discrete GaN on SiC HEMT with an operating frequency in the DC-12 GHz range, and an operating voltage of 25V. The transistor is constructed with TriQuint’s proven TQGaN25 process and is useful for a wide variety of applications including military and civilian radar, radio communications, and avionics.

Tags: ghz gan transistor datasheet

 

20W, 32V, DC-12 GHz GaN RF Transistor: TGF2978-SM Datasheet

2015-12-10 09:52:24| rfglobalnet Downloads

The TGF2978-SM is a 5W discrete GaN on SiC HEMT with an operating frequency in the DC-12 GHz range, and an operating voltage of 20V. The transistor is constructed with TriQuint’s proven TQGaN25 process and is useful for a wide variety of applications including military and civilian radar, radio communications, and avionics.

Tags: ghz gan transistor datasheet

 

20W, 32V, DC-12 GHz GaN RF Transistor: TGF2978-SM Datasheet

2015-12-10 09:52:24| wirelessdesignonline Downloads

The TGF2978-SM is a 5W discrete GaN on SiC HEMT with an operating frequency in the DC-12 GHz range, and an operating voltage of 20V. The transistor is constructed with TriQuint’s proven TQGaN25 process and is useful for a wide variety of applications including military and civilian radar, radio communications, and avionics.

Tags: ghz gan transistor datasheet

 

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