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GaN L-Band Avionics Transistor: IGN1011L1200 Datasheet

2016-04-11 17:49:41| rfglobalnet Downloads

The IGN1011L1200 is a GaN avionics transistor capable of operation within the L-band (1.030 GHz – 1.090 GHz). This avionics transistor utilizes GEN-2 GaN on SiC HEMT technology and comes with depletion mode. It is housed in a metal based package sealed with a ceramic-epoxy lid.

Tags: gan transistor datasheet avionics

 

GaN L-Band Avionics Transistor: IGN1011L1200

2016-04-11 17:46:11| rfglobalnet Products

Integra Technologies offers a GaN avionics transistor capable of operation within the L-band (1.030 GHz – 1.090 GHz). This internal impedance pre-matched device features a negative voltage, requires bias sequencing, and is specified for use under class AB operation.

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Richardson RFPD Introduces New 7001300 MHz, 350W CW, 50V RF Power LDMOS Transistor From NXP

2016-04-05 07:30:27| rfglobalnet Home Page

Richardson RFPD, Inc. announced recently the availability and full design support capabilities for a new LDMOS transistor from NXP Semiconductors.

Tags: power mhz introduces richardson

 

RF Transistor Delivers >50% Efficiency At 150W DVB-T For Ultra Wideband Asymmetrical Doherty Applications

2016-03-08 07:49:50| rfglobalnet News Articles

Ampleon recently announced the launch of the BLF888E RF power transistor designed for DVB-T UHF asymmetrical wideband Doherty amplifier applications.

Tags: applications ultra efficiency delivers

 

03.03.16 -- New Thin-Film Transistor Could Pave The Way For Pliable Devices

2016-03-02 00:56:59| wirelessdesignonline News Articles

03/03/16 Wireless Design Online Newsletter

Tags: way devices transistor pave

 

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