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5W, 32V, DC-12 GHz GaN RF Transistor: TGF2977-SM Datasheet

2015-12-10 09:48:32| rfglobalnet Downloads

The TGF2977-SM is a 5W discrete GaN on SiC HEMT with an operating frequency in the DC-12 GHz range, and an operating voltage of 32V. The transistor is constructed with TriQuint’s proven TQGaN25 process and is useful for a wide variety of applications including military and civilian radar, radio communications, and avionics.

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5W, 32V, DC-12 GHz GaN RF Transistor: TGF2977-SM Datasheet

2015-12-10 09:48:32| wirelessdesignonline Downloads

The TGF2977-SM is a 5W discrete GaN on SiC HEMT with an operating frequency in the DC-12 GHz range, and an operating voltage of 32V. The transistor is constructed with TriQuint’s proven TQGaN25 process and is useful for a wide variety of applications including military and civilian radar, radio communications, and avionics.

Tags: ghz gan transistor datasheet

 
 

70 W Discrete Power Transistor: TGF2957 Datasheet

2015-10-27 12:07:51| rfglobalnet Home Page

The TGF2957 is a 70W discrete GaN on SiC HEMT with an operating frequency in the DC – 12 GHz range, has a saturated output power of 48.6 dBm, and power gain of 19.2 dB at 3 GHz. The transistor is constructed with TriQuint’s proven TQGaN25 process and is useful for a wide variety of high efficiency applications including military and civilian radar, radio communications, and test instrumentation.

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70 W Discrete Power Transistor: TGF2957 Datasheet

2015-10-27 12:07:51| wirelessdesignonline Downloads

The TGF2957 is a 70W discrete GaN on SiC HEMT with an operating frequency in the DC – 12 GHz range, has a saturated output power of 48.6 dBm, and power gain of 19.2 dB at 3 GHz. The transistor is constructed with TriQuint’s proven TQGaN25 process and is useful for a wide variety of high efficiency applications including military and civilian radar, radio communications, and test instrumentation.

Tags: power discrete transistor datasheet

 

55 W Discrete Power Transistor: TGF2956 Datasheet

2015-10-27 12:03:08| rfglobalnet Home Page

The TGF2956 is a 55W discrete GaN on SiC HEMT with an operating frequency in the DC – 12 GHz range, has a saturated output power of 47.6 dBm, and power gain of 19.3 dB at 3 GHz. The transistor is constructed with TriQuint’s proven TQGaN25 process and is useful for a wide variety of high efficiency applications including military and civilian radar, radio communications, and test instrumentation.

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