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12 W Discrete Power Transistor: TGF2953 Datasheet

2015-10-27 11:51:40| rfglobalnet Home Page

The TGF2953 is a 12W discrete GaN on SiC HEMT with an operating frequency in the DC – 12 GHz range, has a saturated output power of 41.2 dBm, and power gain of 18.2 dB at 3.5 GHz. The transistor is constructed with TriQuint’s proven TQGaN25 process and is useful for a wide variety of high efficiency applications including military and civilian radar, radio communications, and test instrumentation.

Tags: power discrete transistor datasheet

 

12 W Discrete Power Transistor: TGF2953 Datasheet

2015-10-27 11:51:40| wirelessdesignonline Downloads

The TGF2953 is a 12W discrete GaN on SiC HEMT with an operating frequency in the DC – 12 GHz range, has a saturated output power of 41.2 dBm, and power gain of 18.2 dB at 3.5 GHz. The transistor is constructed with TriQuint’s proven TQGaN25 process and is useful for a wide variety of high efficiency applications including military and civilian radar, radio communications, and test instrumentation.

Tags: power discrete transistor datasheet

 
 

7 W Discrete Power Transistor: TGF2952 Datasheet

2015-10-27 11:45:50| rfglobalnet Home Page

The TGF2952 is a 7W discrete GaN on SiC HEMT with an operating frequency in the DC – 14 GHz range, has a saturated output power of 38.4 dBm, and power gain of 20.4 dB at 3 GHz. The transistor is constructed with TriQuint’s proven TQGaN25 process and is useful for a wide variety of high efficiency applications including military and civilian radar, radio communications, and test instrumentation.

Tags: power discrete transistor datasheet

 

7 W Discrete Power Transistor: TGF2952 Datasheet

2015-10-27 11:45:50| wirelessdesignonline Downloads

The TGF2952 is a 7W discrete GaN on SiC HEMT with an operating frequency in the DC – 14 GHz range, has a saturated output power of 38.4 dBm, and power gain of 20.4 dB at 3 GHz. The transistor is constructed with TriQuint’s proven TQGaN25 process and is useful for a wide variety of high efficiency applications including military and civilian radar, radio communications, and test instrumentation.

Tags: power discrete transistor datasheet

 

Designing A 5W X-Band Amplifier Using An SMT Packaged Transistor

2015-10-07 13:29:20| rfglobalnet Downloads

This white paper describes the design of a single stage 5W X-band GaN power amplifier by using a low-cost SMT packaged transistor.

Tags: designing packaged amplifier transistor

 

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