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Designing A 5W X-Band Amplifier Using An SMT Packaged Transistor

2015-10-07 13:29:20| wirelessdesignonline Downloads

This white paper describes the design of a single stage 5W X-band GaN power amplifier by using a low-cost SMT packaged transistor.

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Efficient Power Conversion Corporation (EPC) Expands eGaN Integrated Circuit Family With Dual Enhancement-Mode 120 Volt, 60 Milliohm Power Transistor Ideal For Wireless Power Transfer

2015-09-15 07:45:43| wirelessdesignonline News Articles

Efficient Power Conversion Corporation introduces the EPC2110 as the newest member of EPC’s family of enhancement-mode gallium nitride integrated circuits. The EPC2110 is a dual (common-source) eGaN FET configuration in a tiny 1.35 mm x 1.35 mm, 120 VDS, 20 A device with a maximum RDS(on) of 60 milliohms with 5 V applied to the gate.

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09.10.15 -- New Transistor Device Concept For Fast, Low-Power Electronics

2015-09-09 03:24:58| wirelessdesignonline News Articles

09/10/15 Wireless Design Online Newsletter

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90W Discrete Power Transistor: TGF2023-2-20 Datasheet

2015-09-01 18:08:34| rfglobalnet Downloads

The TGF2023-2-20 is a 90W discrete GaN on SiC HEMT with an operating frequency in the DC – 18 GHz range, and an operating voltage of Dec-32V. The transistor is constructed with TriQuint’s proven TQGaN25 process and is useful for a wide variety of applications including military and civilian radar, radio communications, and test instrumentation.

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50W Discrete Power Transistor: TGF2023-2-10 Datasheet

2015-09-01 17:55:39| rfglobalnet Home Page

The TGF2023-2-10 is a 50W discrete GaN on SiC HEMT with an operating frequency in the DC – 18 GHz range, and an operating voltage of Dec-32V. The transistor is constructed with TriQuint’s proven TQGaN25 process and is useful for a wide variety of applications including military and civilian radar, radio communications, and test instrumentation.

Tags: power discrete transistor datasheet

 

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