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Thin Film Transistor Module can be read in direct sunlight.
2013-10-15 14:31:32| Industrial Newsroom - All News for Today
Featuring 18-bit digital interface, 1,000 nit 7.0 TFT Module without touch panel supports WVGA (800 x 480 pixels) resolution and operates up to +85°C. Features include normally white, transmissive display/polarizer mode; anti-glare treatment on surface of LCD glass; and FPC connector. Display offers 50°/70°/70°/70° viewing angle at 6 o’clock direction, and product can be connected to any carrier module that supports TFT interface. This story is related to the following:TFT LCD Modules |
MACOM Extends GaN Leadership With 5W GaN Power Transistor In Ultra-Small Surface Mount Plastic Package
2013-10-15 08:09:29| rfglobalnet News Articles
M/A-COM Technology Solutions Inc. (“MACOM”), a leading supplier of high performance RF, microwave, and millimeter wave products, recently announced a new GaN unmatched wideband transistor in SOT-89 package that is ideally suited to 50 V operation in driver and power applications, at European Microwave Week 2013 in Nurnberg, Germany.
Tags: power
surface
package
plastic
MACOM Extends GaN Leadership With 5W GaN Power Transistor In Ultra-Small Surface Mount Plastic Package
2013-10-15 08:09:29| wirelessdesignonline News Articles
M/A-COM Technology Solutions Inc. (“MACOM”), a leading supplier of high performance RF, microwave, and millimeter wave products, recently announced a new GaN unmatched wideband transistor in SOT-89 package that is ideally suited to 50 V operation in driver and power applications, at European Microwave Week 2013 in Nurnberg, Germany.
Tags: power
surface
package
plastic
MACOM Extends GaN Leadership With 5W GaN Power Transistor In Ultra-Small Surface Mount Plastic Package
2013-10-10 05:40:49| rfglobalnet News Articles
M/A-COM Technology Solutions Inc. (“MACOM”), a leading supplier of high performance RF, microwave, and millimeter wave products, recently announced a new GaN unmatched wideband transistor in SOT-89 package that is ideally suited to 50 V operation in driver and power applications, at European Microwave Week 2013 in Nurnberg, Germany.
Tags: power
surface
package
plastic
Pulsed Power Transistor targets avionics applications.
2013-09-25 14:30:44| Industrial Newsroom - All News for Today
Operating over 1030–1090 MHz bandwidth, MAGX-001090-600L00 Ceramic GaN on SiC HEMT Power Transistor provides 600 W of output power with typ 21.4 db of gain and 63% efficiency. Device has low thermal resistance of 0.05° C/W and load mismatch tolerance of 5:1. With MTTF of over 600 years and low pulse droop of 0.2 dB, RF transistor is suited for pulsed avionics applications, such as secondary surveillance radar in air traffic control systems. This story is related to the following:RF Transistors | Gallium Nitride (GaN) Transistors |
Tags: power
applications
targets
transistor
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