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MACOM Announces Industry's Highest Power GaN L-Band Radar Transistor

2014-08-07 10:20:04| wirelessdesignonline News Articles

M/A-COM Technology Solutions Inc. (M/A-COM), a leading supplier of high performance analog semiconductor solutions, introducedrecently a new GaN on SiC HEMT Power Transistor for L-Band pulsed radar applications.

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RF Power Transistor - MAGX-001214-650L00 by MACOM

2014-08-05 21:30:43| rfglobalnet Home Page

The MAGX-001214-650L00 is a gold-metalized matched Gallium Nitride (GaN) on Silicon Carbide (SiC) RF power transistor optimized for pulsed L-Band radar applications. Using state of the art wafer fabrication processes, these high performance transistors provide high gain, efficiency, bandwidth, and ruggedness over a wide bandwidth for today's demanding application needs. High breakdown voltages allow for reliable and stable operation under more extreme mismatch load conditions compared with older semiconductor technologies.

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NMOS Low-side Driver replaces Darlington transistor arrays.

2014-07-03 14:31:03| Industrial Newsroom - All News for Today

With 600 mA drain current per channel, 7-channel Model TPL7407L drives LED matrix, relay, or stepper motor in high-voltage applications, such as white goods, building automation, lighting, and HVAC. Integrated circuit offers 40 V output and very low output leakage of less than 10 nA per channel. Available in 16-pin SOIC and TSSOP packages, IC operates from -40 to 125°C and includes internal free-wheeling diodes for inductive kick-back protection. This story is related to the following:Electronic Components and DevicesSearch for suppliers of: Integrated Circuits (IC)

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The vacuum tube strikes back: NASAs tiny 460GHz vacuum transistor that could one day replace silicon FETs

2014-06-24 14:12:20| Extremetech

Way back in the salad days of digital computing (the 1940s and '50s), computers were made of vacuum tubes -- big, hot, clunky devices that, when you got right down to it, were essentially glorified light bulbs. This is why early computers like the ENIAC weighed more than 27 tons and consumed more power than a small town. Later, obviously, vacuum tubes would be replaced by probably the greatest invention of all time -- the solid-state transistor -- which would allow for the creation of smaller, faster, cheaper, and more reliable computers. Fast forward to 2014, though, and the humble CMOS field-effect transistor (FET) is starting to show its age. We've pretty much hit the limit on shrinking silicon transistors any further, and they can't operate at speeds much faster than a few gigahertz. Which is why NASA's Ames Research Center is going back to the future with its new vacuum transistor -- a nanometer-scale vacuum tube that, in early testing, has reached speeds of up to 460GHz.

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Technology Advancements To Drive the High Electron Mobility Transistor (HEMT) Market, According To New Trend Report Published By Global Industry Analysts, Inc.

2014-06-20 13:13:13| rfglobalnet Home Page

GIA announces the release of a trend report on High Electron Mobility Transistor (HEMT). Demand for High Electron Mobility Transistor (HEMT) is forecast to be driven by continuous technology developments in the field of transistors.

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