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MACOM Introduces The Industry's Highest Power GaN In Plastic Transistor

2013-05-15 10:00:00| rfglobalnet News Articles

M/A-COM Technology Solutions Inc. (MACOM), a leading supplier of high performance analog semiconductor solutions, introduced today its series of GaN in Plastic packaged power transistors for high-performance civilian and military radar and communications systems.

Tags: power highest plastic introduces

Power Transistor targets L-Band pulsed radar applications.

2013-05-14 14:31:02| Industrial Newsroom - All News for Today

Consisting of gold-metalized pre-matched GaN on Silicon Carbide transistor, MAGX-001214-500L00 provides 500 W of output power with 19 dB of gain, 55% efficiency, and 300 µs pulse. High breakdown voltages allow for operation at 50 V under extreme load mismatch conditions. Operating in frequency range of 1,200–1,400 MHz, HEMT transistor is available in both flanged and flangeless packages. This story is related to the following:Gallium Nitride (GaN) Transistors | Power Transistors

Tags: power applications targets radar

RF Transistor: 2729GN-500V

2013-05-07 16:39:09| rfglobalnet Products

Microsemi’s 2729GN-500V RF transistor is based on GaN on SiC technologies and targeted at high-power air traffic control airport surveillance radar applications. The 2729GN-500V delivers unparalleled performance of 500W of peak power with 12 dB of power gain and 53% drain efficiency over band 2.7 to 2.9 GHz band.

Tags: transistor

M/A-COM Technology Solutions Announces New 500 W GaN On SiC HEMT Pulsed Power Transistor

2013-05-06 03:34:59| rfglobalnet News Articles

M/A-COM Technology Solutions Inc. (M/A-COM), a leading supplier of high performance analog semiconductor solutions, introduced recently a new market leading GaN on SiC HEMT Power Transistor for L-Band pulsed radar applications.

Tags: power technology solutions sic