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Efficient Power Conversion (EPC) Introduces Monolithic Gallium Nitride Power Transistor Half Bridge Enabling Over 97% System Efficiency For A 48 V To 12 V Point Of Load Converter At 22 A Output

2015-04-24 03:54:49| electronicsweb Home Page

EPC announces the EPC2104, 100 V enhancement-mode monolithic GaN transistor half bridge

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GaN Wideband Transistor: MAGX-011086 Datasheet

2015-04-20 12:10:01| rfglobalnet Downloads

The MAGX-011086 is a wideband transistor optimized for operations in DC - 6 GHz, with operating output power levels of 4W (36 dBm) in an industry standards, and is specifically designed for saturated and linear operation in high bandwidth applications.

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GaN Wideband Transistor: MAGX-011086

2015-04-20 12:03:00| rfglobalnet Home Page

The MAGX-011086 is a wideband transistor optimized for operations in DC - 6 GHz. This GaN HEMT is made with operating output power levels of 4W (36 dBm) in an industry standard, low inductance, and a surface mount QFN package.

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Gallium Nitride Transistor (600 V) comes in TO-247 package.

2015-03-25 13:31:08| Industrial Newsroom - All News for Today

Offering 63 mΩ R(on) and 34 A ratings, TPH3205WS enables up to 3 kW high-efficiency inverter designs and titanium class power supplies without need to parallel transistors. Quiet Tab™ source-tab connection design reduces EMI at elevated dV/dt, which minimizes switching loss and enables high-speed operation in power supply and inverter applications. R(on) increase under switching is 5% at 400 V.

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MACOM Announces New 650 W GaN On SiC HEMT Pulsed Power Transistor

2015-03-24 06:43:30| wirelessdesignonline News Articles

M/A-COM Technology Solutions Inc. (“MACOM”), a leading supplier of high-performance analog RF, microwave and optical semiconductor products, today announced the new MAGX-000912-650L00 and MAGX-000912-650L0S, a 650 W gallium nitride (GaN) on silicon carbide (SiC) HEMT pulsed power transistor for L-band pulsed avionics applications.

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