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MACOM Announces New 650 W GaN On SiC HEMT Pulsed Power Transistor
2015-03-20 05:45:46| rfglobalnet Home Page
M/A-COM Technology Solutions Inc. (“MACOM”), a leading supplier of high-performance analog RF, microwave and optical semiconductor products, recently announced the new MAGX-000912-650L00 and MAGX-000912-650L0S, a 650 W gallium nitride (GaN) on silicon carbide (SiC) HEMT pulsed power transistor for L-band pulsed avionics applications. This transistor is available in standard flange or earless flange packaging.
5W GaN Transistor From RFMW Supports 5GHz ISM
2015-03-20 02:35:57| rfglobalnet Home Page
RFMW, Ltd. announces design and sales support for a high efficiency, GaN, 5 watt, input-matched transistor covering the 5GHz ISM bands. The TriQuint (Qorvo) TGF3020-SM provides 5.7W P3dB at 5.4GHz.
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5W GaN Transistor From RFMW Supports 5GHz ISM
2015-03-20 02:35:57| wirelessdesignonline News Articles
RFMW, Ltd. announces design and sales support for a high efficiency, GaN, 5 watt, input-matched transistor covering the 5GHz ISM bands. The TriQuint (Qorvo) TGF3020-SM provides 5.7W P3dB at 5.4GHz.
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Waseda team develops wide-temperature, high-voltage diamond transistor that can compete with SiC and GaN
2015-02-20 17:55:31| Green Car Congress
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Researchers create world's thinnest transistor
2015-02-05 10:33:38| Semiconductors - Topix.net
Researchers in the Cockrell School of Engineering invented the world's thinnest silicon transistors, which use less energy, generate less heat and pave the way for longer battery life and lighter electronics. Deji Akinwande, electrical and computer engineering assistant professor, supervised the silicon transistor research team, which worked in collaboration with the Italian Institute for Microelectronics and Microsystems.
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