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Low-Power Tunneling Transistor For High-Performance Devices Feasible

2013-12-18 02:00:58| rfglobalnet News Articles

A new type of transistor that could make possible fast and low-power computing devices for energy-constrained applications such as smart sensor networks, implantable medical electronics and ultra-mobile computing is feasible, according to Penn State researchers.By Walt Mills

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48V GaN on Si RF Power Transistor: NPT2018 Datasheet

2013-12-05 11:08:28| rfglobalnet Downloads

This datasheet includes data on RF and DC specifications, maximum ratings and more for the Nitronex NPT2018 RF power transistor.

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48V GaN on Si RF Power Transistor: NPT2018

2013-12-05 11:06:37| rfglobalnet Products

The NPT2018 is a GaN-on-Si (gallium nitride-on-silicon) RF power transistor with 48V operation. It’s tunable from DC to 2.5 GHz, has a greater than 60% drain efficiency, and comes in an industry standard plastic package.

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New transistor mimics human synapse to simulate learning

2013-11-06 17:49:22| Extremetech

A new kind of transistor could be the missing piece of the artificial intelligence puzzle. Harvard researchers are working on transistors that mimic human neurons.

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Richardson RFPD Introduces New 50V GaN On SiC RF Power Transistor From Microsemi

2013-10-24 03:38:29| rfglobalnet News Articles

Richardson RFPD, Inc. recently introduces a new 50V gallium nitride on silicon carbide (GaN on SiC) RF power high-electron-mobility transistor (HEMT) from Microsemi Corporation (Microsemi).

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