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6W Discrete Power Transistor: TGF2023-2-01 Datasheet

2015-07-29 15:54:19| rfglobalnet Downloads

The TGF2023-2-01 is a 6W discrete GaN on SiC HEMT with an operating frequency in the DC – 18 GHz range, and an operating voltage of Dec-32V. The transistor is constructed with TriQuint’s proven TQGaN25HV process and is useful for a wide variety of applications including military and civilian radar, radio communications, and test instrumentation.

Tags: power discrete transistor datasheet

 

10W, 32V, DC-6 GHz Power Transistor: T1G6001032-SM Datasheet

2015-07-29 15:51:36| rfglobalnet Downloads

The T1G6001032-SM is a 10W discrete GaN on SiC HEMT with an operating frequency in the DC – 6 GHz range, and an operating voltage of 32V. The transistor is constructed with TriQuint’s proven TQGaN25HV process and is useful for a wide variety of applications including military and civilian radar, radio communications, and test instrumentation.

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100W, 32V, DC-3.5 GHz Power Transistor: TQP0102 Datasheet

2015-07-29 15:44:00| rfglobalnet Downloads

The TQP0102 is a 5W discrete GaN on SiC HEMT with an operating frequency in the DC – 4 GHz range, and an operating voltage of 32V. The transistor is constructed with TriQuint’s proven TQGaN25HV process and is useful for a wide variety of applications including military and civilian radar, radio communications, and avionics.

Tags: power ghz transistor datasheet

 

100W, 32V, DC-3.5 GHz Power Transistor: TGF2819-FS Datasheet

2015-07-29 15:41:00| rfglobalnet Downloads

The TGF2819-FS is a 100W discrete GaN on SiC HEMT with an operating frequency in the DC – 3.5 GHz range, and an operating voltage of 32V. The transistor is constructed with TriQuint’s proven TQGaN25HV process and is useful for a wide variety of applications including military and civilian radar, radio communications, and avionics.

Tags: power ghz transistor datasheet

 

285W, 36V, DC-2 GHz Power Transistor: T1G2028536-FL Datasheet

2015-07-29 15:36:50| rfglobalnet Downloads

The T1G2028536-FL is a 285W discrete GaN on SiC HEMT with an operating frequency in the DC – 2 GHz range, and an operating voltage of 36V. The transistor is constructed with TriQuint’s proven TQGaN25HV process and is useful for a wide variety of applications including military and civilian radar, radio communications, and avionics.

Tags: power ghz transistor datasheet

 

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